A CONTACT STRUCTURE AND METHOD OF MANUFACTURING THE SAME

A CONTACT STRUCTURE AND METHOD OF MANUFACTURING THE SAME

A contact structure and a manufacturing method thereof are provided to prevent a contact error between adjacent storage node contact plugs by forming an etching stopper pattern for surrounding the storage node contact plug. A contact structure includes first and second interlayer dielectrics(108,112...

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1. Verfasser: YU, SUK WON
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description A contact structure and a manufacturing method thereof are provided to prevent a contact error between adjacent storage node contact plugs by forming an etching stopper pattern for surrounding the storage node contact plug. A contact structure includes first and second interlayer dielectrics(108,112), an etching stopper pattern(130), and a contact plug(138). The first interlayer dielectric is formed on a substrate and includes contact pads therein. The second interlayer dielectric is formed on the first interlayer dielectric and includes bit line structures which are elongated in a first direction. The etching stopper pattern is formed on the second interlayer dielectric and elongated in a second direction, which is perpendicular to the first direction. The contact plug is electrically connected to the contact pads through the first and second interlayer dielectrics between the etching stopper patterns. An upper portion of the contact plug is contacted with the etching stopper pattern.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title A CONTACT STRUCTURE AND METHOD OF MANUFACTURING THE SAME
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