NONVOLATILE MEMORY DEVICE, FABRICATING THE SAME AND ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE INCLUDING THE SAME

NONVOLATILE MEMORY DEVICE, FABRICATING THE SAME AND ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE INCLUDING THE SAME

A non-volatile memory device, a fabricating method thereof, and an organic lighting emitting diode display device including the same are provided to implement directly the non-volatile memory device in a flat panel display and facilitate write and erase operations. A semiconductor layer(120) is form...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CHOI, BYOUNG DEOG, PARK, HYE HYANG, JUNG, JU YEUN, CHOI, DAE CHUL, PARK, HYUN SUN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator CHOI, BYOUNG DEOG
PARK, HYE HYANG
JUNG, JU YEUN
CHOI, DAE CHUL
PARK, HYUN SUN
description A non-volatile memory device, a fabricating method thereof, and an organic lighting emitting diode display device including the same are provided to implement directly the non-volatile memory device in a flat panel display and facilitate write and erase operations. A semiconductor layer(120) is formed on the substrate, and has a source region(S), a drain region(D) having a shallower impurity injection region than the source region, and a channel region(C) formed between the source and drain regions. A first gate insulating layer(130) is formed on the semiconductor layer, and has regions corresponding to the source and drain regions thinner than a region corresponding to the channel region. A first gate electrode(140), a second gate insulating layer(150), and a second gate electrode(160) are formed on the first gate insulating layer.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20070104779A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20070104779A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20070104779A3</originalsourceid><addsrcrecordid>eNqNjD0LwjAUALs4iPofHrgqxA8ojvHltQ0mL5KkBadSJE6ilfr_0UHB0emGO26cPdhx44yM2hBYss6fQFGjkRZQyL3X-FZcQqwIgrQEkhU4X0rWCGQIo3emtpopIDESKB2ORn4noBlNrX4P02x06a5Dmn04yeYFRayWqb-3aei7c7qlZ3vwayFysRLbPN_JzX_VC9gaOMg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>NONVOLATILE MEMORY DEVICE, FABRICATING THE SAME AND ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE INCLUDING THE SAME</title><source>esp@cenet</source><creator>CHOI, BYOUNG DEOG ; PARK, HYE HYANG ; JUNG, JU YEUN ; CHOI, DAE CHUL ; PARK, HYUN SUN</creator><creatorcontrib>CHOI, BYOUNG DEOG ; PARK, HYE HYANG ; JUNG, JU YEUN ; CHOI, DAE CHUL ; PARK, HYUN SUN</creatorcontrib><description>A non-volatile memory device, a fabricating method thereof, and an organic lighting emitting diode display device including the same are provided to implement directly the non-volatile memory device in a flat panel display and facilitate write and erase operations. A semiconductor layer(120) is formed on the substrate, and has a source region(S), a drain region(D) having a shallower impurity injection region than the source region, and a channel region(C) formed between the source and drain regions. A first gate insulating layer(130) is formed on the semiconductor layer, and has regions corresponding to the source and drain regions thinner than a region corresponding to the channel region. A first gate electrode(140), a second gate insulating layer(150), and a second gate electrode(160) are formed on the first gate insulating layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20071029&amp;DB=EPODOC&amp;CC=KR&amp;NR=20070104779A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20071029&amp;DB=EPODOC&amp;CC=KR&amp;NR=20070104779A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHOI, BYOUNG DEOG</creatorcontrib><creatorcontrib>PARK, HYE HYANG</creatorcontrib><creatorcontrib>JUNG, JU YEUN</creatorcontrib><creatorcontrib>CHOI, DAE CHUL</creatorcontrib><creatorcontrib>PARK, HYUN SUN</creatorcontrib><title>NONVOLATILE MEMORY DEVICE, FABRICATING THE SAME AND ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE INCLUDING THE SAME</title><description>A non-volatile memory device, a fabricating method thereof, and an organic lighting emitting diode display device including the same are provided to implement directly the non-volatile memory device in a flat panel display and facilitate write and erase operations. A semiconductor layer(120) is formed on the substrate, and has a source region(S), a drain region(D) having a shallower impurity injection region than the source region, and a channel region(C) formed between the source and drain regions. A first gate insulating layer(130) is formed on the semiconductor layer, and has regions corresponding to the source and drain regions thinner than a region corresponding to the channel region. A first gate electrode(140), a second gate insulating layer(150), and a second gate electrode(160) are formed on the first gate insulating layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjD0LwjAUALs4iPofHrgqxA8ojvHltQ0mL5KkBadSJE6ilfr_0UHB0emGO26cPdhx44yM2hBYss6fQFGjkRZQyL3X-FZcQqwIgrQEkhU4X0rWCGQIo3emtpopIDESKB2ORn4noBlNrX4P02x06a5Dmn04yeYFRayWqb-3aei7c7qlZ3vwayFysRLbPN_JzX_VC9gaOMg</recordid><startdate>20071029</startdate><enddate>20071029</enddate><creator>CHOI, BYOUNG DEOG</creator><creator>PARK, HYE HYANG</creator><creator>JUNG, JU YEUN</creator><creator>CHOI, DAE CHUL</creator><creator>PARK, HYUN SUN</creator><scope>EVB</scope></search><sort><creationdate>20071029</creationdate><title>NONVOLATILE MEMORY DEVICE, FABRICATING THE SAME AND ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE INCLUDING THE SAME</title><author>CHOI, BYOUNG DEOG ; PARK, HYE HYANG ; JUNG, JU YEUN ; CHOI, DAE CHUL ; PARK, HYUN SUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20070104779A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHOI, BYOUNG DEOG</creatorcontrib><creatorcontrib>PARK, HYE HYANG</creatorcontrib><creatorcontrib>JUNG, JU YEUN</creatorcontrib><creatorcontrib>CHOI, DAE CHUL</creatorcontrib><creatorcontrib>PARK, HYUN SUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHOI, BYOUNG DEOG</au><au>PARK, HYE HYANG</au><au>JUNG, JU YEUN</au><au>CHOI, DAE CHUL</au><au>PARK, HYUN SUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>NONVOLATILE MEMORY DEVICE, FABRICATING THE SAME AND ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE INCLUDING THE SAME</title><date>2007-10-29</date><risdate>2007</risdate><abstract>A non-volatile memory device, a fabricating method thereof, and an organic lighting emitting diode display device including the same are provided to implement directly the non-volatile memory device in a flat panel display and facilitate write and erase operations. A semiconductor layer(120) is formed on the substrate, and has a source region(S), a drain region(D) having a shallower impurity injection region than the source region, and a channel region(C) formed between the source and drain regions. A first gate insulating layer(130) is formed on the semiconductor layer, and has regions corresponding to the source and drain regions thinner than a region corresponding to the channel region. A first gate electrode(140), a second gate insulating layer(150), and a second gate electrode(160) are formed on the first gate insulating layer.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_KR20070104779A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title NONVOLATILE MEMORY DEVICE, FABRICATING THE SAME AND ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE INCLUDING THE SAME
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T15%3A00%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHOI,%20BYOUNG%20DEOG&rft.date=2007-10-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20070104779A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true