FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

A field effect transistor, which is arranged in a semiconductor device, comprises a first and a second doped source/drain region, both regions being arranged within a semiconductor substrate on either side of a gate electrode, and a channel region formed within the substrate between both doped sourc...

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Bibliographische Detailangaben

Hauptverfasser:	SCHLOSSER TILL, MANGER DIRK
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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