SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME DEVICE

A semiconductor device and a manufacturing method thereof are provided to prevent the increase of leakage current due to the field inversion by using a field inversion preventing layer. A plurality of active regions are formed on a semiconductor substrate. A field region(140) made of field oxide is formed on the resultant structure to insulate the active regions from each other. A field inversion preventing layer(148) is formed on a portion of the field region. A field gate poly(150) is formed on the active regions and the field inversion preventing layer. The field inversion preventing layer is formed like a rectangle type structure or an oval type structure.