METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A method for manufacturing a semiconductor device is provided to improve the polysilicon depletion effect of a PMOS gate by forming a PMOS transistor using a SiGe gate. A gate insulating layer(130) and a silicon germanium(SiGe) layer are sequentially formed on a substrate(110) of a PMOS gate region....

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: MAENG, JONG SUN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for manufacturing a semiconductor device is provided to improve the polysilicon depletion effect of a PMOS gate by forming a PMOS transistor using a SiGe gate. A gate insulating layer(130) and a silicon germanium(SiGe) layer are sequentially formed on a substrate(110) of a PMOS gate region. The silicon germanium(SiGe) layer has variable germanium(Ge) concentration according to the height. Impurities are implanted into the silicon germanium(SiGe) layer. By patterning the doped silicon germanium(SiGe) layer, a silicon germanium(SiGe) gate(150) is then formed.