PLASMA-EXCITED CHEMICAL VAPOR DEPOSITION METHOD, SILICON/OXYGEN/NITROGEN-CONTAINING MATERIAL AND LAYERED ASSEMBLY
The invention relates to a plasma-excited chemical vapor deposition method for forming a silicon/oxygen/nitrogen-containing material. The invention provides that during the supply of silicon material and oxygen material, nitrogen material is supplied while using an organic silicon precursor material...
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| creator | SCHINDLER GUENTHER PAMLER WERNER GABRIC ZVONIMIR |
| description | The invention relates to a plasma-excited chemical vapor deposition method for forming a silicon/oxygen/nitrogen-containing material. The invention provides that during the supply of silicon material and oxygen material, nitrogen material is supplied while using an organic silicon precursor material. |
| format | Patent |
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| language | eng |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | PLASMA-EXCITED CHEMICAL VAPOR DEPOSITION METHOD, SILICON/OXYGEN/NITROGEN-CONTAINING MATERIAL AND LAYERED ASSEMBLY |
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