CHEMICAL MECHANICAL POLISHING SLURRY FOR POLISHING POLY-SILICON FILM AND METHOD FOR PRODUCING THEREOF

CHEMICAL MECHANICAL POLISHING SLURRY FOR POLISHING POLY-SILICON FILM AND METHOD FOR PRODUCING THEREOF

CMP slurry for polishing a poly-silicon film and a method for producing the same are provided to prevent a dishing effect, enhance polishing uniformity, and obtain proper selectivity. CMP slurry for polishing a poly-silicon film includes (a) a metal oxide of 0.1 to 30 weight percent, (b) a quaternar...

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Hauptverfasser: CHOUNG, JAE HOON, LEE, TAE YOUNG, LEE, IN KYUNG, CHOI, WON YOUNG
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator CHOUNG, JAE HOON
LEE, TAE YOUNG
LEE, IN KYUNG
CHOI, WON YOUNG
description CMP slurry for polishing a poly-silicon film and a method for producing the same are provided to prevent a dishing effect, enhance polishing uniformity, and obtain proper selectivity. CMP slurry for polishing a poly-silicon film includes (a) a metal oxide of 0.1 to 30 weight percent, (b) a quaternary ammonium base compound of 0.05 to 5 weight percent, (c) a tertiary amine of 0.01 to 1 weight percent, and (d) a cationic polymer of 0.01 to 1 weight percent. The metal oxide includes one of SiO2, Al2O3, CeO2, and ZrO2. A size of a primary particle of the metal oxide corresponds to 10 to 70 nm. A non-surface area of the metal oxide corresponds to 50 to 300 m^2/g.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title CHEMICAL MECHANICAL POLISHING SLURRY FOR POLISHING POLY-SILICON FILM AND METHOD FOR PRODUCING THEREOF
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