STACKED SEMICONDUCTOR PACKAGE

A metal pattern for heat dissipation is formed on the backside of a second semiconductor substrate, the metal pattern being in contact with a first semiconductor element mounted on a semiconductor device adjacent to the backside. Vias are formed on the peripheries of semiconductor substrates, the vi...

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Bibliographische Detailangaben
1. Verfasser: AKAHOSHI TOSHITAKA
Format: Patent
Sprache:eng
Schlagworte:
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