METHOD OF FORMING TUNGSTEN FILM

A method of forming a tungsten film, capable of restricting voids and volcanoes as large as adversely affecting characteristics despite the small diameter of a buried hole, and providing good burying characteristics. When forming a tungsten film on the surface of an object of treating (W) in a vacuu...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SUZUKI KENJI, ISHIZUKA HOTAKA, TACHIBANA MITSUHIRO, SATO KOHICHI, OKUBO KAZUYA, FANG CHENG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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