APPARATUS AND METHOD FOR WHITE POWDER REDUCTION IN SILICON NITRIDE DEPOSITION USING REMOTE PLASMA SOURCE CLEANING TECHNOLOGY
An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; pr...
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| creator | MAYDAN DAN SHANG QUANYUAN LAW KAM S ROBERTSON ROBERT M |
| description | An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber. The apparatus includes a deposition chamber having walls; means for heating the walls, the means thermally coupled to the walls; a liner covering a substantial portion of the walls; a remote chamber disposed outside of the chamber; an activation source adapted to deliver energy into the remote chamber; a first conduit for flowing a precursor gas from a remote gas supply into the remote chamber where it is activated by the activation source to form a reactive species; and a second conduit for flowing the reactive species from the remote chamber into the deposition chamber. |
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Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber. The apparatus includes a deposition chamber having walls; means for heating the walls, the means thermally coupled to the walls; a liner covering a substantial portion of the walls; a remote chamber disposed outside of the chamber; an activation source adapted to deliver energy into the remote chamber; a first conduit for flowing a precursor gas from a remote gas supply into the remote chamber where it is activated by the activation source to form a reactive species; and a second conduit for flowing the reactive species from the remote chamber into the deposition chamber.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; CLEANING ; CLEANING IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PERFORMING OPERATIONS ; PREVENTION OF FOULING IN GENERAL ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060802&DB=EPODOC&CC=KR&NR=20060087376A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060802&DB=EPODOC&CC=KR&NR=20060087376A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MAYDAN DAN</creatorcontrib><creatorcontrib>SHANG QUANYUAN</creatorcontrib><creatorcontrib>LAW KAM S</creatorcontrib><creatorcontrib>ROBERTSON ROBERT M</creatorcontrib><title>APPARATUS AND METHOD FOR WHITE POWDER REDUCTION IN SILICON NITRIDE DEPOSITION USING REMOTE PLASMA SOURCE CLEANING TECHNOLOGY</title><description>An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber. The apparatus includes a deposition chamber having walls; means for heating the walls, the means thermally coupled to the walls; a liner covering a substantial portion of the walls; a remote chamber disposed outside of the chamber; an activation source adapted to deliver energy into the remote chamber; a first conduit for flowing a precursor gas from a remote gas supply into the remote chamber where it is activated by the activation source to form a reactive species; and a second conduit for flowing the reactive species from the remote chamber into the deposition chamber.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>CLEANING</subject><subject>CLEANING IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PREVENTION OF FOULING IN GENERAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi80KgkAURt20iOodLrQOJEHbDjNX55LOlflBWonEtIoSbNnDp9EDtPoOnPOtk7doW2GFDw6EUdCg16ygZAudJo_QcqfQgkUVpCc2QAYc1SRnNOQtKQSFLTv62uDIVHPd8PKthWsEOA5WIsgahVmsR6kN11xdtsnqNtynuPvtJtmX6KU-xPHZx2kcrvERX_3ZHtM0T9NTkRW5yP6rPpLZPEs</recordid><startdate>20060802</startdate><enddate>20060802</enddate><creator>MAYDAN DAN</creator><creator>SHANG QUANYUAN</creator><creator>LAW KAM S</creator><creator>ROBERTSON ROBERT M</creator><scope>EVB</scope></search><sort><creationdate>20060802</creationdate><title>APPARATUS AND METHOD FOR WHITE POWDER REDUCTION IN SILICON NITRIDE DEPOSITION USING REMOTE PLASMA SOURCE CLEANING TECHNOLOGY</title><author>MAYDAN DAN ; SHANG QUANYUAN ; LAW KAM S ; ROBERTSON ROBERT M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20060087376A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2006</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>CLEANING</topic><topic>CLEANING IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PREVENTION OF FOULING IN GENERAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>MAYDAN DAN</creatorcontrib><creatorcontrib>SHANG QUANYUAN</creatorcontrib><creatorcontrib>LAW KAM S</creatorcontrib><creatorcontrib>ROBERTSON ROBERT M</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MAYDAN DAN</au><au>SHANG QUANYUAN</au><au>LAW KAM S</au><au>ROBERTSON ROBERT M</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>APPARATUS AND METHOD FOR WHITE POWDER REDUCTION IN SILICON NITRIDE DEPOSITION USING REMOTE PLASMA SOURCE CLEANING TECHNOLOGY</title><date>2006-08-02</date><risdate>2006</risdate><abstract>An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber. The apparatus includes a deposition chamber having walls; means for heating the walls, the means thermally coupled to the walls; a liner covering a substantial portion of the walls; a remote chamber disposed outside of the chamber; an activation source adapted to deliver energy into the remote chamber; a first conduit for flowing a precursor gas from a remote gas supply into the remote chamber where it is activated by the activation source to form a reactive species; and a second conduit for flowing the reactive species from the remote chamber into the deposition chamber.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CLEANING CLEANING IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING |
| title | APPARATUS AND METHOD FOR WHITE POWDER REDUCTION IN SILICON NITRIDE DEPOSITION USING REMOTE PLASMA SOURCE CLEANING TECHNOLOGY |
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