METHOD FOR FABRICATING A NITRIDED SILICON-OXIDE GATE DIELECTRIC

METHOD FOR FABRICATING A NITRIDED SILICON-OXIDE GATE DIELECTRIC

A method of fabricating a gate dielectric layer, including: providing a substrate (100); forming a silicon dioxide layer (110) on a top surface of the substrate (105); performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer (110A)...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: QUINLIVAN JAMES J, BURNHAM JAY S, WARD BETH A, NAKOS JAMES S, ROQUE BERNIE JR, SHANK STEVEN M
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of fabricating a gate dielectric layer, including: providing a substrate (100); forming a silicon dioxide layer (110) on a top surface of the substrate (105); performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer (110A). The dielectric layer so formed may be used in the fabrication of MOSFETs (145).