STORAGE DEVICE AND SEMICONDUCTOR DEVICE
A storage device is proposed, which includes: a source line arranged along a row direction; a bit line arranged along a column direction; a storage element arranged at an intersection of the source line and the bit line; a writing circuit connected to one terminal of the bit line and applying a pred...
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creator | NAGAO HAJIME OKAZAKI NOBUMICHI SAGARA TSUTOMU MORI HIRONOBU HACHINO HIDENARI NAKASHIMA CHIEKO |
description | A storage device is proposed, which includes: a source line arranged along a row direction; a bit line arranged along a column direction; a storage element arranged at an intersection of the source line and the bit line; a writing circuit connected to one terminal of the bit line and applying a predetermined voltage to the bit line; and a voltage adjusting circuit connected to a storage element that is located closest to another terminal of the bit line; wherein the voltage adjusting circuit compares the voltage applied to the storage element located closest to the another terminal of the bit line with a setting voltage to thereby adjust the voltage that the writing circuit applies to the bit line. |
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language | eng |
recordid | cdi_epo_espacenet_KR20060051813A |
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subjects | INFORMATION STORAGE PHYSICS STATIC STORES |
title | STORAGE DEVICE AND SEMICONDUCTOR DEVICE |
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