A METHOD OF IMPLANTING A SUBSTRATE AND AN ION IMPLANTER FOR PERFORMING THE METHOD

An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as...

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Hauptverfasser: KINDERSLEY PETER, FARLEY MARVIN, MURRELL ADRIAN, SAKASE TAKAO, HARRISON BERNARD F, EDWARDS PETER IVOR TUDOR, LOWRIE CRAIG, SATOH SHU, RYDING GEOFFREY, BANKS PETER MICHAEL
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creator KINDERSLEY PETER
FARLEY MARVIN
MURRELL ADRIAN
SAKASE TAKAO
HARRISON BERNARD F
EDWARDS PETER IVOR TUDOR
LOWRIE CRAIG
SATOH SHU
RYDING GEOFFREY
BANKS PETER MICHAEL
description An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
title A METHOD OF IMPLANTING A SUBSTRATE AND AN ION IMPLANTER FOR PERFORMING THE METHOD
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