ELECTRICALLY ERASABLE AND PROGRAMMABLE READ ONLY MEMORY(EEPROM) WITH ENOUGH CELL DATA SENSING MARGIN BY SELECTING DUMMY CELLS TO INCREASE THE CURRENT LEVEL

ELECTRICALLY ERASABLE AND PROGRAMMABLE READ ONLY MEMORY(EEPROM) WITH ENOUGH CELL DATA SENSING MARGIN BY SELECTING DUMMY CELLS TO INCREASE THE CURRENT LEVEL

PURPOSE: An electrically erasable and programmable read only memory(EEPROM) is provided to have enough cell data sensing margin by selecting dummy cells in case the current of cell data in a read mode is lower than predetermined level. CONSTITUTION: An electrically erasable and programmable read onl...

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1. Verfasser: KIM, BYONG ROK
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Sprache:eng ; kor
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INFORMATION STORAGE
PHYSICS
STATIC STORES
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description PURPOSE: An electrically erasable and programmable read only memory(EEPROM) is provided to have enough cell data sensing margin by selecting dummy cells in case the current of cell data in a read mode is lower than predetermined level. CONSTITUTION: An electrically erasable and programmable read only memory(EEPROM) comprises a memory cell array(10) having plural normal cells and dummy cells; a cell current detecting means(20) activated by a read activating signal, for detecting the cell data current stored in the normal cell; a read control means(30) activated by the read activating signal, for activating some dummy cells according to the detecting result from the cell current detecting means(20), and for transferring the cell data to a sense amplifier in case the cell data current is more than predetermined level; the sense amplifier(40) activated by the read activating signal, for sense amplifying the transferred cell data from the read control means(30).
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subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title ELECTRICALLY ERASABLE AND PROGRAMMABLE READ ONLY MEMORY(EEPROM) WITH ENOUGH CELL DATA SENSING MARGIN BY SELECTING DUMMY CELLS TO INCREASE THE CURRENT LEVEL
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