METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO SHORTEN PERIOD OF ETCH PROCESS
PURPOSE: A method for fabricating a semiconductor device is provided to shorten a period of an etch process by proposing properly conditions such as reaction gas, power, and pressure necessary for dry-etch plasma. CONSTITUTION: An oxide layer(20) is formed on a semiconductor substrate(10). A nitride...
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| creator | SEO, HAN GI |
| description | PURPOSE: A method for fabricating a semiconductor device is provided to shorten a period of an etch process by proposing properly conditions such as reaction gas, power, and pressure necessary for dry-etch plasma. CONSTITUTION: An oxide layer(20) is formed on a semiconductor substrate(10). A nitride layer(30) is formed on the oxide layer. A photoresist pattern is formed on the nitride layer. A dry-etch process for the exposed nitride layer and the exposed oxide layer is performed by using plasma. The plasma is generated by applying predetermined pressure and predetermined power to reaction gas. A field oxide layer(50) is formed on the exposed semiconductor substrate by performing an ion implantation process. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20040078243A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20040078243A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20040078243A3</originalsourceid><addsrcrecordid>eNrjZPD1dQ3x8HdRcPMPUnBzdArydHYM8fRzVwh29fV09vdzCXUOAcq4uIZ5OrsqhPgrBHv4B4W4-ikEuAZ5ArX5uym4hjh7KAQE-Tu7BgfzMLCmJeYUp_JCaW4GZTeQvG5qQX58anFBYnJqXmpJvHeQkYGBiYGBuYWRibGjMXGqAJblLv4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO SHORTEN PERIOD OF ETCH PROCESS</title><source>esp@cenet</source><creator>SEO, HAN GI</creator><creatorcontrib>SEO, HAN GI</creatorcontrib><description>PURPOSE: A method for fabricating a semiconductor device is provided to shorten a period of an etch process by proposing properly conditions such as reaction gas, power, and pressure necessary for dry-etch plasma. CONSTITUTION: An oxide layer(20) is formed on a semiconductor substrate(10). A nitride layer(30) is formed on the oxide layer. A photoresist pattern is formed on the nitride layer. A dry-etch process for the exposed nitride layer and the exposed oxide layer is performed by using plasma. The plasma is generated by applying predetermined pressure and predetermined power to reaction gas. A field oxide layer(50) is formed on the exposed semiconductor substrate by performing an ion implantation process.</description><edition>7</edition><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040910&DB=EPODOC&CC=KR&NR=20040078243A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040910&DB=EPODOC&CC=KR&NR=20040078243A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SEO, HAN GI</creatorcontrib><title>METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO SHORTEN PERIOD OF ETCH PROCESS</title><description>PURPOSE: A method for fabricating a semiconductor device is provided to shorten a period of an etch process by proposing properly conditions such as reaction gas, power, and pressure necessary for dry-etch plasma. CONSTITUTION: An oxide layer(20) is formed on a semiconductor substrate(10). A nitride layer(30) is formed on the oxide layer. A photoresist pattern is formed on the nitride layer. A dry-etch process for the exposed nitride layer and the exposed oxide layer is performed by using plasma. The plasma is generated by applying predetermined pressure and predetermined power to reaction gas. A field oxide layer(50) is formed on the exposed semiconductor substrate by performing an ion implantation process.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPD1dQ3x8HdRcPMPUnBzdArydHYM8fRzVwh29fV09vdzCXUOAcq4uIZ5OrsqhPgrBHv4B4W4-ikEuAZ5ArX5uym4hjh7KAQE-Tu7BgfzMLCmJeYUp_JCaW4GZTeQvG5qQX58anFBYnJqXmpJvHeQkYGBiYGBuYWRibGjMXGqAJblLv4</recordid><startdate>20040910</startdate><enddate>20040910</enddate><creator>SEO, HAN GI</creator><scope>EVB</scope></search><sort><creationdate>20040910</creationdate><title>METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO SHORTEN PERIOD OF ETCH PROCESS</title><author>SEO, HAN GI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20040078243A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2004</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SEO, HAN GI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SEO, HAN GI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO SHORTEN PERIOD OF ETCH PROCESS</title><date>2004-09-10</date><risdate>2004</risdate><abstract>PURPOSE: A method for fabricating a semiconductor device is provided to shorten a period of an etch process by proposing properly conditions such as reaction gas, power, and pressure necessary for dry-etch plasma. CONSTITUTION: An oxide layer(20) is formed on a semiconductor substrate(10). A nitride layer(30) is formed on the oxide layer. A photoresist pattern is formed on the nitride layer. A dry-etch process for the exposed nitride layer and the exposed oxide layer is performed by using plasma. The plasma is generated by applying predetermined pressure and predetermined power to reaction gas. A field oxide layer(50) is formed on the exposed semiconductor substrate by performing an ion implantation process.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO SHORTEN PERIOD OF ETCH PROCESS |
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