METHOD FOR FORMING LOCAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

PURPOSE: A method for forming a local interconnection of a semiconductor device is provided to reduce filed recess and prevent a junction leakage by preventing a filed insulation layer from being etched in etching an insulation layer in a metal formation region for a local interconnection by a damascene process. CONSTITUTION: While silicidation is performed, the first insulation layer is deposited. By a photolithography process, the first insulation layer in a portion where the local interconnection is not formed. The second insulation layer(46) is deposited in a portion from which the first insulation layer is eliminated. The first insulation layer in a local interconnection formation portion is eliminated. Metal is deposited in a portion from which the first insulation layer in the local interconnection formation portion is removed, so as to form the local interconnection.