THIN FILM CAPACITOR AND MANUFACTURING METHOD THEREOF

PURPOSE: A thin film capacitor and a manufacturing method thereof are provided to prevent leakage current by forming a nitride spacer at both sidewalls of a lower metal line. CONSTITUTION: A first electrode layer(13) is formed on a lower insulating layer(12). A nitride spacer(14') is formed at...

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Bibliographische Detailangaben

1. Verfasser:	SEO, YEONG HUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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