THIN FILM CAPACITOR AND MANUFACTURING METHOD THEREOF

THIN FILM CAPACITOR AND MANUFACTURING METHOD THEREOF

PURPOSE: A thin film capacitor and a manufacturing method thereof are provided to prevent leakage current by forming a nitride spacer at both sidewalls of a lower metal line. CONSTITUTION: A first electrode layer(13) is formed on a lower insulating layer(12). A nitride spacer(14') is formed at...

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1. Verfasser: SEO, YEONG HUN
Format: Patent
Sprache:eng ; kor
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description PURPOSE: A thin film capacitor and a manufacturing method thereof are provided to prevent leakage current by forming a nitride spacer at both sidewalls of a lower metal line. CONSTITUTION: A first electrode layer(13) is formed on a lower insulating layer(12). A nitride spacer(14') is formed at both sidewalls of the first electrode layer. An interlayer dielectric(15) with a via hole for exposing the first electrode layer is formed thereon. A dielectric film(16) is formed on the entire inner surface of the via hole. A second electrode layer(17) for filling the via hole is formed on the dielectric film. An upper metal line(18) for contacting the second electrode layer is formed on the resultant structure. A bottom corner of the via hole is located on the spacer.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title THIN FILM CAPACITOR AND MANUFACTURING METHOD THEREOF
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