Method of forming semiconductor device with capacitor

PURPOSE: A method for fabricating a semiconductor device including a capacitor is provided to simplify the fabrication process without using an etch-stop layer by using a supporting layer and a sacrificial layer of different wet-etching speeds. CONSTITUTION: A supporting layer(116) and a sacrificial...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YOON, GWAN YEONG, OH, JAE HUI, KIM, HONG GI
Format: Patent
Sprache:eng ; kor
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!