Power semiconductor module having pin-structured terminal
PURPOSE: A power semiconductor module with a terminal of a pin structure is provided to reduce electrical hindrance by eliminating an intersection between a main electrode terminal and a sub electrode terminal, and to use copper material by shortening the length of the sub electrode terminal. CONSTI...
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creator | LEE, GWANG BOK KIM, JI HWAN |
description | PURPOSE: A power semiconductor module with a terminal of a pin structure is provided to reduce electrical hindrance by eliminating an intersection between a main electrode terminal and a sub electrode terminal, and to use copper material by shortening the length of the sub electrode terminal. CONSTITUTION: A plurality of main electrode terminal patterns protruding to the outside and a sub electrode terminal pattern disposed in the inside are arranged in the surface of a direct bonding copper(DBC) substrate(102). The main electrode terminals(108) connected to the main electrode terminal patterns and the sub electrode terminals(110) connected to the sub electrode terminal patterns made of pin structure. The main electrode terminal patterns and the sub electrode terminal patterns on the DBC substrate don't intersect each other.
본 발명의 전력용 반도체 모듈은, 외부로 돌출되는 복수개의 주 전극 터미널 패턴들 및 내부에서 배선되는 부 전극 터미널 패턴이 DBC 기판 표면에 배치된 구조를 갖는 전력용 반도체 모듈에 관한 것으로서, 주 전극 터미널 패턴들에 연결되는 주 전극 터미널들과 부 전극 터미널 패턴들에 연결된 부 전극 터미널들은 핀 구조로 이루어지고, DBC 기판상의 주 전극 터미널 패턴들과 부 전극 터미널 패턴들은 상호 교차되지 않는 구조를 갖는다. |
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본 발명의 전력용 반도체 모듈은, 외부로 돌출되는 복수개의 주 전극 터미널 패턴들 및 내부에서 배선되는 부 전극 터미널 패턴이 DBC 기판 표면에 배치된 구조를 갖는 전력용 반도체 모듈에 관한 것으로서, 주 전극 터미널 패턴들에 연결되는 주 전극 터미널들과 부 전극 터미널 패턴들에 연결된 부 전극 터미널들은 핀 구조로 이루어지고, DBC 기판상의 주 전극 터미널 패턴들과 부 전극 터미널 패턴들은 상호 교차되지 않는 구조를 갖는다.</description><edition>7</edition><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20031203&DB=EPODOC&CC=KR&NR=20030091231A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20031203&DB=EPODOC&CC=KR&NR=20030091231A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE, GWANG BOK</creatorcontrib><creatorcontrib>KIM, JI HWAN</creatorcontrib><title>Power semiconductor module having pin-structured terminal</title><description>PURPOSE: A power semiconductor module with a terminal of a pin structure is provided to reduce electrical hindrance by eliminating an intersection between a main electrode terminal and a sub electrode terminal, and to use copper material by shortening the length of the sub electrode terminal. CONSTITUTION: A plurality of main electrode terminal patterns protruding to the outside and a sub electrode terminal pattern disposed in the inside are arranged in the surface of a direct bonding copper(DBC) substrate(102). The main electrode terminals(108) connected to the main electrode terminal patterns and the sub electrode terminals(110) connected to the sub electrode terminal patterns made of pin structure. The main electrode terminal patterns and the sub electrode terminal patterns on the DBC substrate don't intersect each other.
본 발명의 전력용 반도체 모듈은, 외부로 돌출되는 복수개의 주 전극 터미널 패턴들 및 내부에서 배선되는 부 전극 터미널 패턴이 DBC 기판 표면에 배치된 구조를 갖는 전력용 반도체 모듈에 관한 것으로서, 주 전극 터미널 패턴들에 연결되는 주 전극 터미널들과 부 전극 터미널 패턴들에 연결된 부 전극 터미널들은 핀 구조로 이루어지고, DBC 기판상의 주 전극 터미널 패턴들과 부 전극 터미널 패턴들은 상호 교차되지 않는 구조를 갖는다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAMyC9PLVIoTs3NTM7PSylNLskvUsjNTynNSVXISCzLzEtXKMjM0y0uKQJKlRalpiiUpBblZuYl5vAwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUknjvICMDA2MDA0tDI2NDR2PiVAEAVQ4wOg</recordid><startdate>20031203</startdate><enddate>20031203</enddate><creator>LEE, GWANG BOK</creator><creator>KIM, JI HWAN</creator><scope>EVB</scope></search><sort><creationdate>20031203</creationdate><title>Power semiconductor module having pin-structured terminal</title><author>LEE, GWANG BOK ; KIM, JI HWAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20030091231A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2003</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE, GWANG BOK</creatorcontrib><creatorcontrib>KIM, JI HWAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE, GWANG BOK</au><au>KIM, JI HWAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Power semiconductor module having pin-structured terminal</title><date>2003-12-03</date><risdate>2003</risdate><abstract>PURPOSE: A power semiconductor module with a terminal of a pin structure is provided to reduce electrical hindrance by eliminating an intersection between a main electrode terminal and a sub electrode terminal, and to use copper material by shortening the length of the sub electrode terminal. CONSTITUTION: A plurality of main electrode terminal patterns protruding to the outside and a sub electrode terminal pattern disposed in the inside are arranged in the surface of a direct bonding copper(DBC) substrate(102). The main electrode terminals(108) connected to the main electrode terminal patterns and the sub electrode terminals(110) connected to the sub electrode terminal patterns made of pin structure. The main electrode terminal patterns and the sub electrode terminal patterns on the DBC substrate don't intersect each other.
본 발명의 전력용 반도체 모듈은, 외부로 돌출되는 복수개의 주 전극 터미널 패턴들 및 내부에서 배선되는 부 전극 터미널 패턴이 DBC 기판 표면에 배치된 구조를 갖는 전력용 반도체 모듈에 관한 것으로서, 주 전극 터미널 패턴들에 연결되는 주 전극 터미널들과 부 전극 터미널 패턴들에 연결된 부 전극 터미널들은 핀 구조로 이루어지고, DBC 기판상의 주 전극 터미널 패턴들과 부 전극 터미널 패턴들은 상호 교차되지 않는 구조를 갖는다.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Power semiconductor module having pin-structured terminal |
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