Field effect transistor using sharp metal-insulator transition
PURPOSE: A field effect transistor is provided to manifest metallic characteristic even though low density of hole is added by using sharp metal- insulator transition. CONSTITUTION: A LaTiO3(LTO) Mott transistor(410) is placed on a SrTiO3(STO) substrate(400). A Ba1-xSrxTiO3(BSTO) ferroelectric layer...
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| creator | KIM, HYEON TAK KANG, GWANG YONG |
| description | PURPOSE: A field effect transistor is provided to manifest metallic characteristic even though low density of hole is added by using sharp metal- insulator transition. CONSTITUTION: A LaTiO3(LTO) Mott transistor(410) is placed on a SrTiO3(STO) substrate(400). A Ba1-xSrxTiO3(BSTO) ferroelectric layer(420) is formed on a portion of the LTO Mott insulator. A gate electrode(430) is formed on the BSTO ferroelectric layer to apply a voltage. As a voltage is applied to the BSTO ferroelectric layer, holes are poured into the LTO Mott transistor so that abrupt metal-insulator transition occurs in it to form a conducting channel(415). A source and drain electrode(440,450) are formed on the first and second surface of the LTO Mott transistor respectively.
본 발명의 전계 효과 트랜지스터는, 기판과, 기판 상에 배치되어 충전 홀이 유입시 급격한 금속-절연체 상전이를 발생시키는 모트 절연체와, 모트 절연체 위에 배치되어 일정 전압 인가시 충전 홀을 모트 절연체에 유입시키는 강유전체막과, 강유전체막 위에 배치되어 강유전체막에 일정 전압을 인가하기 위한 게이트 전극과, 모트 절연체의 제1 표면과 전기적으로 연결되도록 형성된 소스 전극, 및 모트 절연체의 제2 표면과 전기적으로 연결되도록 형성된 드레인 전극을 구비한다. |
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본 발명의 전계 효과 트랜지스터는, 기판과, 기판 상에 배치되어 충전 홀이 유입시 급격한 금속-절연체 상전이를 발생시키는 모트 절연체와, 모트 절연체 위에 배치되어 일정 전압 인가시 충전 홀을 모트 절연체에 유입시키는 강유전체막과, 강유전체막 위에 배치되어 강유전체막에 일정 전압을 인가하기 위한 게이트 전극과, 모트 절연체의 제1 표면과 전기적으로 연결되도록 형성된 소스 전극, 및 모트 절연체의 제2 표면과 전기적으로 연결되도록 형성된 드레인 전극을 구비한다.</description><edition>7</edition><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20030326&DB=EPODOC&CC=KR&NR=20030024156A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20030326&DB=EPODOC&CC=KR&NR=20030024156A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM, HYEON TAK</creatorcontrib><creatorcontrib>KANG, GWANG YONG</creatorcontrib><title>Field effect transistor using sharp metal-insulator transition</title><description>PURPOSE: A field effect transistor is provided to manifest metallic characteristic even though low density of hole is added by using sharp metal- insulator transition. CONSTITUTION: A LaTiO3(LTO) Mott transistor(410) is placed on a SrTiO3(STO) substrate(400). A Ba1-xSrxTiO3(BSTO) ferroelectric layer(420) is formed on a portion of the LTO Mott insulator. A gate electrode(430) is formed on the BSTO ferroelectric layer to apply a voltage. As a voltage is applied to the BSTO ferroelectric layer, holes are poured into the LTO Mott transistor so that abrupt metal-insulator transition occurs in it to form a conducting channel(415). A source and drain electrode(440,450) are formed on the first and second surface of the LTO Mott transistor respectively.
본 발명의 전계 효과 트랜지스터는, 기판과, 기판 상에 배치되어 충전 홀이 유입시 급격한 금속-절연체 상전이를 발생시키는 모트 절연체와, 모트 절연체 위에 배치되어 일정 전압 인가시 충전 홀을 모트 절연체에 유입시키는 강유전체막과, 강유전체막 위에 배치되어 강유전체막에 일정 전압을 인가하기 위한 게이트 전극과, 모트 절연체의 제1 표면과 전기적으로 연결되도록 형성된 소스 전극, 및 모트 절연체의 제2 표면과 전기적으로 연결되도록 형성된 드레인 전극을 구비한다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLBzy0zNSVFITUtLTS5RKClKzCvOLC7JL1IoLc7MS1cozkgsKlDITS1JzNHNzCsuzUkEyUGUlWTm5_EwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUknjvICMDA2MDAyMTQ1MzR2PiVAEAX7kyCQ</recordid><startdate>20030326</startdate><enddate>20030326</enddate><creator>KIM, HYEON TAK</creator><creator>KANG, GWANG YONG</creator><scope>EVB</scope></search><sort><creationdate>20030326</creationdate><title>Field effect transistor using sharp metal-insulator transition</title><author>KIM, HYEON TAK ; KANG, GWANG YONG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20030024156A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2003</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM, HYEON TAK</creatorcontrib><creatorcontrib>KANG, GWANG YONG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM, HYEON TAK</au><au>KANG, GWANG YONG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Field effect transistor using sharp metal-insulator transition</title><date>2003-03-26</date><risdate>2003</risdate><abstract>PURPOSE: A field effect transistor is provided to manifest metallic characteristic even though low density of hole is added by using sharp metal- insulator transition. CONSTITUTION: A LaTiO3(LTO) Mott transistor(410) is placed on a SrTiO3(STO) substrate(400). A Ba1-xSrxTiO3(BSTO) ferroelectric layer(420) is formed on a portion of the LTO Mott insulator. A gate electrode(430) is formed on the BSTO ferroelectric layer to apply a voltage. As a voltage is applied to the BSTO ferroelectric layer, holes are poured into the LTO Mott transistor so that abrupt metal-insulator transition occurs in it to form a conducting channel(415). A source and drain electrode(440,450) are formed on the first and second surface of the LTO Mott transistor respectively.
본 발명의 전계 효과 트랜지스터는, 기판과, 기판 상에 배치되어 충전 홀이 유입시 급격한 금속-절연체 상전이를 발생시키는 모트 절연체와, 모트 절연체 위에 배치되어 일정 전압 인가시 충전 홀을 모트 절연체에 유입시키는 강유전체막과, 강유전체막 위에 배치되어 강유전체막에 일정 전압을 인가하기 위한 게이트 전극과, 모트 절연체의 제1 표면과 전기적으로 연결되도록 형성된 소스 전극, 및 모트 절연체의 제2 표면과 전기적으로 연결되도록 형성된 드레인 전극을 구비한다.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| title | Field effect transistor using sharp metal-insulator transition |
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