PLASMA CHEMICAL VAPOR DEPOSITION CHAMBER FOR SUPPLYING UNIFORM CLEANING GAS

PLASMA CHEMICAL VAPOR DEPOSITION CHAMBER FOR SUPPLYING UNIFORM CLEANING GAS

PURPOSE: A plasma chemical vapor deposition chamber for supplying uniform cleaning gas is provided to uniformly eliminate oxide layers deposited on the inner wall of the chamber or on a gas supply apparatus, by including a plurality of injectors formed on a circular tube. CONSTITUTION: An inner wall...

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Hauptverfasser: KIM, SEON RAE, NA, DONG GEUN
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator KIM, SEON RAE
NA, DONG GEUN
description PURPOSE: A plasma chemical vapor deposition chamber for supplying uniform cleaning gas is provided to uniformly eliminate oxide layers deposited on the inner wall of the chamber or on a gas supply apparatus, by including a plurality of injectors formed on a circular tube. CONSTITUTION: An inner wall of the chamber(200) confines a predetermined inner space. A radio frequency(RF) coil(250) applies RF power to the chamber. A gas injection unit supplies reaction gas for chemical vapor deposition and plasma formation gas to the inner space of the chamber. A cleaning supply unit(300) supplies cleaning gas for eliminating a material layer attached to the inside of the chamber, having a circular type installed along the inner wall of the chamber so that the cleaning gas is uniformly supplied to the inside of the chamber.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PLASMA CHEMICAL VAPOR DEPOSITION CHAMBER FOR SUPPLYING UNIFORM CLEANING GAS
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