PAD CONDITIONING METHOD OF CMP PROCESS

PURPOSE: A pad conditioning method of a CMP(Chemical Mechanical Polishing) process is provided to measure an outer thickness and an inner thickness of a polishing pad within a short time. CONSTITUTION: An outer thickness(OD) and an inner thickness(ID) of a polishing pad(110) are measured by using a...

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Bibliographische Detailangaben
Hauptverfasser:	LEE, YEONG CHUL, KIM, CHUN GWANG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	PURPOSE: A pad conditioning method of a CMP(Chemical Mechanical Polishing) process is provided to measure an outer thickness and an inner thickness of a polishing pad within a short time. CONSTITUTION: An outer thickness(OD) and an inner thickness(ID) of a polishing pad(110) are measured by using a diameter scan method. The outer thickness(OD) of the polishing pad is compared with the inner thickness(ID) of the polishing pad. A conditioner is moved according to a difference between the outer thickness(OD) and the inner thickness(ID). A measurement apparatus(120) for measuring a profile of the polishing pad(110) is formed with a guide rail(122), a sensor(124), and a drive portion(126). The guide rail(122) is moved to an upper portion of the polishing pad(110). The sensor(124) is used for measuring the thickness of the polishing pad(110). The drive portion(126) provides a driving force for moving sensor(124) on the guide rail(122).