CRITICAL DIMENSION CORRECTION MASK
PURPOSE: A critical dimension correction mask is provided to fabricate a critical dimension mask with a prominent critical dimension by forming the second and the third transmission areas smaller or larger than the first transmission area. CONSTITUTION: The first transmission area(41) is formed by a...
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| creator | EOM, TAE SEUNG KOO, SANG SUL |
| description | PURPOSE: A critical dimension correction mask is provided to fabricate a critical dimension mask with a prominent critical dimension by forming the second and the third transmission areas smaller or larger than the first transmission area. CONSTITUTION: The first transmission area(41) is formed by a multitude of transmission areas formed on a quartz substrate according sizes or types. The second transmission area is reduced repeatedly as much as -2 greed sizing(51) and -1 greed sizing(52) of the first transmission area(41). The third transmission area is increased repeatedly as much as +1 greed sizing(53) and +2 greed sizing of the first transmission area(41). The first transmission area(41), the second transmission area, the third transmission area, and a fine transmission area(42) are formed on a chrome layer(31). The fine transmission area(42) is formed by performed a mask writing process when a pattern generation work is performed. |
| format | Patent |
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CONSTITUTION: The first transmission area(41) is formed by a multitude of transmission areas formed on a quartz substrate according sizes or types. The second transmission area is reduced repeatedly as much as -2 greed sizing(51) and -1 greed sizing(52) of the first transmission area(41). The third transmission area is increased repeatedly as much as +1 greed sizing(53) and +2 greed sizing of the first transmission area(41). The first transmission area(41), the second transmission area, the third transmission area, and a fine transmission area(42) are formed on a chrome layer(31). The fine transmission area(42) is formed by performed a mask writing process when a pattern generation work is performed.</description><edition>7</edition><language>eng ; kor</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2001</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20011101&DB=EPODOC&CC=KR&NR=20010094625A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20011101&DB=EPODOC&CC=KR&NR=20010094625A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>EOM, TAE SEUNG</creatorcontrib><creatorcontrib>KOO, SANG SUL</creatorcontrib><title>CRITICAL DIMENSION CORRECTION MASK</title><description>PURPOSE: A critical dimension correction mask is provided to fabricate a critical dimension mask with a prominent critical dimension by forming the second and the third transmission areas smaller or larger than the first transmission area. CONSTITUTION: The first transmission area(41) is formed by a multitude of transmission areas formed on a quartz substrate according sizes or types. The second transmission area is reduced repeatedly as much as -2 greed sizing(51) and -1 greed sizing(52) of the first transmission area(41). The third transmission area is increased repeatedly as much as +1 greed sizing(53) and +2 greed sizing of the first transmission area(41). The first transmission area(41), the second transmission area, the third transmission area, and a fine transmission area(42) are formed on a chrome layer(31). The fine transmission area(42) is formed by performed a mask writing process when a pattern generation work is performed.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2001</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFByDvIM8XR29FFw8fR19Qv29PdTcPYPCnJ1DgExfR2DvXkYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSbx3kJGBgaGBgaWJmZGpozFxqgDFMiNU</recordid><startdate>20011101</startdate><enddate>20011101</enddate><creator>EOM, TAE SEUNG</creator><creator>KOO, SANG SUL</creator><scope>EVB</scope></search><sort><creationdate>20011101</creationdate><title>CRITICAL DIMENSION CORRECTION MASK</title><author>EOM, TAE SEUNG ; KOO, SANG SUL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20010094625A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2001</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>EOM, TAE SEUNG</creatorcontrib><creatorcontrib>KOO, SANG SUL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>EOM, TAE SEUNG</au><au>KOO, SANG SUL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CRITICAL DIMENSION CORRECTION MASK</title><date>2001-11-01</date><risdate>2001</risdate><abstract>PURPOSE: A critical dimension correction mask is provided to fabricate a critical dimension mask with a prominent critical dimension by forming the second and the third transmission areas smaller or larger than the first transmission area. CONSTITUTION: The first transmission area(41) is formed by a multitude of transmission areas formed on a quartz substrate according sizes or types. The second transmission area is reduced repeatedly as much as -2 greed sizing(51) and -1 greed sizing(52) of the first transmission area(41). The third transmission area is increased repeatedly as much as +1 greed sizing(53) and +2 greed sizing of the first transmission area(41). The first transmission area(41), the second transmission area, the third transmission area, and a fine transmission area(42) are formed on a chrome layer(31). The fine transmission area(42) is formed by performed a mask writing process when a pattern generation work is performed.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| language | eng ; kor |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | CRITICAL DIMENSION CORRECTION MASK |
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