METHOD OF MANUFACTURING THIN FILM TRANSISTOR OF AMORPHOUS SILICON THIN FILM BY USING SELECTIVE SILICON ION INJECTION AND LASER CRYSTALLIZATION

METHOD OF MANUFACTURING THIN FILM TRANSISTOR OF AMORPHOUS SILICON THIN FILM BY USING SELECTIVE SILICON ION INJECTION AND LASER CRYSTALLIZATION

PURPOSE: A method of manufacturing a thin film transistor is provided to obtain uniformity of a polysilicon thin film and crystal grains of excellent quality having low trap density by performing a selective silicon ion injection and laser crystallization to the thin film. CONSTITUTION: An amorphous...

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Hauptverfasser: HAN, O HYEONG, YOON, CHAN UI
Format: Patent
Sprache:eng ; kor
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator HAN, O HYEONG
YOON, CHAN UI
description PURPOSE: A method of manufacturing a thin film transistor is provided to obtain uniformity of a polysilicon thin film and crystal grains of excellent quality having low trap density by performing a selective silicon ion injection and laser crystallization to the thin film. CONSTITUTION: An amorphous silicon thin film(11) is formed on an underlying layer. A masking window is formed to selectively shield the amorphous silicon thin film in a gate area(A). The masking window is used as an ion injection barrier for performing a silicon ion injection to the amorphous silicon thin film. The amorphous silicon thin film is crystallized by using a laser to form a polysilicon thin film. A source/drain doping is performed to complete a thin film transistor. The thin film transistor is increased in on-current and lowered in off-current and threshold voltage.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD OF MANUFACTURING THIN FILM TRANSISTOR OF AMORPHOUS SILICON THIN FILM BY USING SELECTIVE SILICON ION INJECTION AND LASER CRYSTALLIZATION
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