METHOD FOR FORMING BPSG FILM

PURPOSE: A BPSG film formation method is provided to be capable of preventing boron from introducing into a polysilicon line upon annealing process for reflow of the BPS film and thus lowering the line resistance. CONSTITUTION: A BPSG film formation method includes forming the first boron phosphorus...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LEE, SEON HO, SON, GI GEUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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