METHOD FOR FORMING BPSG FILM

METHOD FOR FORMING BPSG FILM

PURPOSE: A BPSG film formation method is provided to be capable of preventing boron from introducing into a polysilicon line upon annealing process for reflow of the BPS film and thus lowering the line resistance. CONSTITUTION: A BPSG film formation method includes forming the first boron phosphorus...

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Hauptverfasser: LEE, SEON HO, SON, GI GEUN
Format: Patent
Sprache:eng ; kor
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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SON, GI GEUN
description PURPOSE: A BPSG film formation method is provided to be capable of preventing boron from introducing into a polysilicon line upon annealing process for reflow of the BPS film and thus lowering the line resistance. CONSTITUTION: A BPSG film formation method includes forming the first boron phosphorus silicate glass(BPSG) film by controlling boron dopants at 4.2 - 4.6 Wt% and phosphorous dopants to 4.5 - 4.8 Wt%, which are introduced via the first injector among the injectors in the deposition equipment for depositing the BPSG film. The bulk dopants of the BPSG film is controlled using the second and third injectors to form the second BPSG film, and annealing process is then performed.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD FOR FORMING BPSG FILM
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