METHOD FOR MANUFACTURING A GAIN-COMBINED SINGLE MODE SEMICONDUCTOR LASER
PURPOSE: A method for manufacturing a gain-combined single mode semiconductor laser is provided to manufacture a single mode laser light source by epi-layer growth once. CONSTITUTION: A method for manufacturing a gain-combined with single mode semiconductor laser has following steps. An active layer...
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | PURPOSE: A method for manufacturing a gain-combined single mode semiconductor laser is provided to manufacture a single mode laser light source by epi-layer growth once. CONSTITUTION: A method for manufacturing a gain-combined with single mode semiconductor laser has following steps. An active layer(12) is formed on a substrate(13). The active layer(12) has a quantum wire(8) structure. A clad layer(11) is formed is formed on the active layer(12). A resistive electrode contact layer(10) is formed on the clad layer. A stripe electrode is formed in order to generate laser-resonator in a perpendicular direction to the quantum wire(8) on the resistive electrode contact layer(10), thereby manufacture a single mode laser light source by one crystal growth. |
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