METHOD FOR FORMING PHASE SHIFT MASK

PURPOSE: A method for forming a phase shift mask is to form a micro pattern having a superior resolution by a chrome pattern and an oxide film without etching a quartz substrate. CONSTITUTION: An oxide film is formed on an upper portion of a quartz substrate(11). The first photoresist pattern is for...

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Bibliographische Detailangaben
Hauptverfasser:	KOO, SANG SUL, KOO, YEONG MO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A method for forming a phase shift mask is to form a micro pattern having a superior resolution by a chrome pattern and an oxide film without etching a quartz substrate. CONSTITUTION: An oxide film is formed on an upper portion of a quartz substrate(11). The first photoresist pattern is formed on the oxide film. The oxide film is etched using the first photoresist pattern as a mask, and the photoresist is removed. After the etching process of the oxide film, the substrate is cleaned using a solution to remove a polymer on side walls of the oxide film. A whole surface of the substrate is deposited with a chrome(17) to remove a step, using a high density plasma vapor deposition process. The chrome is etched to form a pattern of chrome until the pattern of oxide film is exposed. The second photoresist pattern is formed on the flatted surface. The oxide film is etched to form the first channel(21) consisting of a bottom of the quartz substrate and a side wall of the chrome pattern.