METHOD FOR FILMING TUNGSTEN FILM

PURPOSE: A filming method of tungsten film is provided to enlarge a particle diameter of a tungsten crystalline particle(grain) or to reduce a non-resistant value by being the whole flux of gas per 1minute over 100% of a processing container capacity. CONSTITUTION: A nuclear crystalline(48) of tungs...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	ISHIZUKA HOTAKA, TACHIBANA MITSUHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PURPOSE: A filming method of tungsten film is provided to enlarge a particle diameter of a tungsten crystalline particle(grain) or to reduce a non-resistant value by being the whole flux of gas per 1minute over 100% of a processing container capacity. CONSTITUTION: A nuclear crystalline(48) of tungsten is grown on a surface of a processed body under a filming gas contained a tungsten element. The processed body is exposed under a gas contained a boron for a short time. A tungsten film(50) is formed by growing the nuclear crystalline(48) under the filming gas, a hydrogen gas and the gas contained the boron of hydrogen dilution. When a diborane gas of 5% hydrogen dilution is used as the gas contained the boron, its flux is over 0.58% for the whole flux of gas. A thickness of the nuclear crystalline layer is under 50nm in the growing process of nuclear crystalline. The whole flux of each gas per 1minute is set over 100% of a capacity of a processing container in a vacuum processor in the filming process of tungsten.