METHOD FOR FABRICATING POLYSILICON THIN FLIM TRANSISTOR HAVING TRENCH GATE STRUCTURE

PURPOSE: A method for fabricating dual or multiple gate polysilicon thin film transistor is provided to allow operation in high voltage, to prevent a leakage current, and to decrease device size. CONSTITUTION: A polysilicon thin film transistor is used for a pixel array switch of panel or a drive IC...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KIM, DAE YONG, NO, TAE MUN, GU, JIN GEUN, NAM, GI SU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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