SEMICONDUCTOR DEVICE HAVING ALLOWANCE EXTENT WITH RESPECT TO PATTERN DISPLACEMENT

PURPOSE: A semiconductor device is to compensate a position fitting displacement of gate electrodes of transistors, thereby allowing other transistors to have a same feature. CONSTITUTION: A semiconductor device having an allowance extent with respect to a pattern displacement comprises a first tran...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: YAMAGUCHI SATOSI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PURPOSE: A semiconductor device is to compensate a position fitting displacement of gate electrodes of transistors, thereby allowing other transistors to have a same feature. CONSTITUTION: A semiconductor device having an allowance extent with respect to a pattern displacement comprises a first transistor(1) and a second transistor(2) which are point-symmetrically arranged each other with respect to one point and respectively have a first gate(15) and a second gate(16) and a first channel region(5) and a second channel region(6). The first and second transistors are respectively formed on the basis of a first and a second gate electrode patterns to be symmetrically arranged with respect to the point. The first and second gate electrode patterns have respectively a first and a second serif sections(21,22) and an electrode between the serif sections.