LIQUID CRYSTAL DISPLAY DEVICE AND PRODUCTION METHOD

PURPOSE: A liquid crystal display(LCD) device and production method is provided to prevent short of electrode and to reduce defect of pixel for LCD device by making trench of protection layer and to enlarge step of data line section. CONSTITUTION: The LCD device comprises a board, a gate line, a dat...

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Bibliographische Detailangaben
Hauptverfasser:	SONG, YEONG GU, KIM, DONG GYU, BAEK, BEOM GI, KIM, WON JU
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PURPOSE: A liquid crystal display(LCD) device and production method is provided to prevent short of electrode and to reduce defect of pixel for LCD device by making trench of protection layer and to enlarge step of data line section. CONSTITUTION: The LCD device comprises a board, a gate line, a data line, a thin film transistor, a protection layer and a pixel electrode. In the LCD device, the gate line is forming on the board and delivers a scan signal. The data line insulating and intersecting with the gate line and delivers an image signal. A first and second terminal of the thin film transistor connect the gate line and the data line in respectively. The protection layer with a trench covers the thin film transistor. The pixel electrode is forming on the protection layer in pixel area and connects a third terminal of the thin film transistor. 기판 위에 게이트선을 형성하고, 게이트 절연막을 덮은 후 비정질 규소층과 도핑된 비정질 규소층을 형성하고, 데이터선, 소스 및 드레인 전극을 형성한다. 보호막을 형성한 후 게이트선과 데이터선의 교차로 정의되는 화소 영역을 둘러싸는 트렌치를 형성한다. 보호막 위에 ITO를 증착하고 패터닝하여 트렌치 안쪽에 ITO 화소 전극을 형성한다. 이렇게 하면, 보호막에 형성된 트렌치를 이용하여 인접 화소의 ITO 화소 전극이 단락되는 것을 막을 수 있고, 데이터 배선 및 비정질 규소층, 도핑된 비정질 규소층의 잔류도 제거할 수 있다.