CLEANING METHOD OF SEMICONDUCTOR DEVICES
PURPOSE: A method for cleaning semiconductor device is provided to easily remove etching byproducts existed on a word line by using an improved cleaning solutions. CONSTITUTION: The method comprises the steps of depositing a metal layer on a semiconductor substrate(1) having a transistor; forming a...
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| creator | YUN, YONG HYUK KIM, YOUNG SEO JUNG, EUI SAM |
| description | PURPOSE: A method for cleaning semiconductor device is provided to easily remove etching byproducts existed on a word line by using an improved cleaning solutions. CONSTITUTION: The method comprises the steps of depositing a metal layer on a semiconductor substrate(1) having a transistor; forming a metal wire(3) by etching the metal layer using a resist pattern(4) as a mask; and cleaning the resultant structure so as to remove etching byproducts(5) such as AlwClxCyOz generated by reactions of metal, etching gas and oxygen, wherein the cleaning step further comprises dipping the resultant structure into a cleaning bath(6) containing the cleaning solution composed of amine(R-NH2) aqueous solutions, and adding H2O2 to the cleaning solution.
본 발명은 금속 산화물로 된 폴리머를 용이하게 제거할 수 있는 반도체 소자의 세정 방법을 개시한다. 개시된 본 발명은, 금속 산화물로 된 폴리머를 과산화 수소수가 첨가된 아민 수용액으로 제거한다. 그러면, 과산화 수소수에서 발생된 산소가 상기 금속 산화물의 금속 성분과 반응하여, 금속 성분을 반응이 용이하게 일어날 수 있는 상태로 변환시킨다. 이에따라, 폴리머와 아민 수용액간의 반응이 촉진되어, 금속 산화물이 단시간에 효과적으로 제거된다. |
| format | Patent |
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본 발명은 금속 산화물로 된 폴리머를 용이하게 제거할 수 있는 반도체 소자의 세정 방법을 개시한다. 개시된 본 발명은, 금속 산화물로 된 폴리머를 과산화 수소수가 첨가된 아민 수용액으로 제거한다. 그러면, 과산화 수소수에서 발생된 산소가 상기 금속 산화물의 금속 성분과 반응하여, 금속 성분을 반응이 용이하게 일어날 수 있는 상태로 변환시킨다. 이에따라, 폴리머와 아민 수용액간의 반응이 촉진되어, 금속 산화물이 단시간에 효과적으로 제거된다.</description><edition>7</edition><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2000</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000125&DB=EPODOC&CC=KR&NR=20000004363A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000125&DB=EPODOC&CC=KR&NR=20000004363A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YUN, YONG HYUK</creatorcontrib><creatorcontrib>KIM, YOUNG SEO</creatorcontrib><creatorcontrib>JUNG, EUI SAM</creatorcontrib><title>CLEANING METHOD OF SEMICONDUCTOR DEVICES</title><description>PURPOSE: A method for cleaning semiconductor device is provided to easily remove etching byproducts existed on a word line by using an improved cleaning solutions. CONSTITUTION: The method comprises the steps of depositing a metal layer on a semiconductor substrate(1) having a transistor; forming a metal wire(3) by etching the metal layer using a resist pattern(4) as a mask; and cleaning the resultant structure so as to remove etching byproducts(5) such as AlwClxCyOz generated by reactions of metal, etching gas and oxygen, wherein the cleaning step further comprises dipping the resultant structure into a cleaning bath(6) containing the cleaning solution composed of amine(R-NH2) aqueous solutions, and adding H2O2 to the cleaning solution.
본 발명은 금속 산화물로 된 폴리머를 용이하게 제거할 수 있는 반도체 소자의 세정 방법을 개시한다. 개시된 본 발명은, 금속 산화물로 된 폴리머를 과산화 수소수가 첨가된 아민 수용액으로 제거한다. 그러면, 과산화 수소수에서 발생된 산소가 상기 금속 산화물의 금속 성분과 반응하여, 금속 성분을 반응이 용이하게 일어날 수 있는 상태로 변환시킨다. 이에따라, 폴리머와 아민 수용액간의 반응이 촉진되어, 금속 산화물이 단시간에 효과적으로 제거된다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2000</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNBw9nF19PP0c1fwdQ3x8HdR8HdTCHb19XT293MJdQ7xD1JwcQ3zdHYN5mFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8d5BRgZgYGJsZuxoTJwqAIvQJMg</recordid><startdate>20000125</startdate><enddate>20000125</enddate><creator>YUN, YONG HYUK</creator><creator>KIM, YOUNG SEO</creator><creator>JUNG, EUI SAM</creator><scope>EVB</scope></search><sort><creationdate>20000125</creationdate><title>CLEANING METHOD OF SEMICONDUCTOR DEVICES</title><author>YUN, YONG HYUK ; KIM, YOUNG SEO ; JUNG, EUI SAM</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20000004363A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2000</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YUN, YONG HYUK</creatorcontrib><creatorcontrib>KIM, YOUNG SEO</creatorcontrib><creatorcontrib>JUNG, EUI SAM</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YUN, YONG HYUK</au><au>KIM, YOUNG SEO</au><au>JUNG, EUI SAM</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CLEANING METHOD OF SEMICONDUCTOR DEVICES</title><date>2000-01-25</date><risdate>2000</risdate><abstract>PURPOSE: A method for cleaning semiconductor device is provided to easily remove etching byproducts existed on a word line by using an improved cleaning solutions. CONSTITUTION: The method comprises the steps of depositing a metal layer on a semiconductor substrate(1) having a transistor; forming a metal wire(3) by etching the metal layer using a resist pattern(4) as a mask; and cleaning the resultant structure so as to remove etching byproducts(5) such as AlwClxCyOz generated by reactions of metal, etching gas and oxygen, wherein the cleaning step further comprises dipping the resultant structure into a cleaning bath(6) containing the cleaning solution composed of amine(R-NH2) aqueous solutions, and adding H2O2 to the cleaning solution.
본 발명은 금속 산화물로 된 폴리머를 용이하게 제거할 수 있는 반도체 소자의 세정 방법을 개시한다. 개시된 본 발명은, 금속 산화물로 된 폴리머를 과산화 수소수가 첨가된 아민 수용액으로 제거한다. 그러면, 과산화 수소수에서 발생된 산소가 상기 금속 산화물의 금속 성분과 반응하여, 금속 성분을 반응이 용이하게 일어날 수 있는 상태로 변환시킨다. 이에따라, 폴리머와 아민 수용액간의 반응이 촉진되어, 금속 산화물이 단시간에 효과적으로 제거된다.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | CLEANING METHOD OF SEMICONDUCTOR DEVICES |
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