NOVEL METAL PRECURSOR FOR FORMING THIN FILM USING CYCLOPENTADIENE AND METHOD FOR MANUFACTURING THE SAME
사이클로펜타디엔을 이용한 신규한 박막 형성용 금속 전구체 및 그 제조 방법에 대하여 개시한다. 본 발명에 따른 본 발명에 따른 금속 전구체의 제조 방법은 (a) 사이클로펜타디엔(Cp)에 C4 ~ C6의 알킬기(R1)-할로겐(X) 화합물을 첨가하여, Cp-R1으로 표시되는 제1화합물을 형성하는 단계; (b) 상기 Cp-R1으로 표시되는 제1화합물에 알칼리 금속 화합물 및 제1유기용매를 첨가한 후, 할로겐(X)-금속(M) 화합물 및 제2유기용매를 첨가하여 M(Cp-R1)3-yXy (y = 0 또는 1이다.)로 표시되는 제2화합물을 형성...
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| creator | LEE JANG JUN KIM SUNG MIN KO SEUNG HWAN PARK SEONG HO KIM YOUNG MIN LEE CHANG YEOB |
| description | 사이클로펜타디엔을 이용한 신규한 박막 형성용 금속 전구체 및 그 제조 방법에 대하여 개시한다. 본 발명에 따른 본 발명에 따른 금속 전구체의 제조 방법은 (a) 사이클로펜타디엔(Cp)에 C4 ~ C6의 알킬기(R1)-할로겐(X) 화합물을 첨가하여, Cp-R1으로 표시되는 제1화합물을 형성하는 단계; (b) 상기 Cp-R1으로 표시되는 제1화합물에 알칼리 금속 화합물 및 제1유기용매를 첨가한 후, 할로겐(X)-금속(M) 화합물 및 제2유기용매를 첨가하여 M(Cp-R1)3-yXy (y = 0 또는 1이다.)로 표시되는 제2화합물을 형성하는 단계; 및 (c) 상기 M(Cp-R1)3-yXy로 표시되는 제2화합물에 제3유기용매 및 리간드를 첨가하여 금속 전구체를 제조하는 단계;를 포함하는 것을 특징으로 한다. |
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INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; ORGANIC CHEMISTRY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241105&DB=EPODOC&CC=KR&NR=102726441B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241105&DB=EPODOC&CC=KR&NR=102726441B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE JANG JUN</creatorcontrib><creatorcontrib>KIM SUNG MIN</creatorcontrib><creatorcontrib>KO SEUNG HWAN</creatorcontrib><creatorcontrib>PARK SEONG HO</creatorcontrib><creatorcontrib>KIM YOUNG MIN</creatorcontrib><creatorcontrib>LEE CHANG YEOB</creatorcontrib><title>NOVEL METAL PRECURSOR FOR FORMING THIN FILM USING CYCLOPENTADIENE AND METHOD FOR MANUFACTURING THE SAME</title><description>사이클로펜타디엔을 이용한 신규한 박막 형성용 금속 전구체 및 그 제조 방법에 대하여 개시한다. 본 발명에 따른 본 발명에 따른 금속 전구체의 제조 방법은 (a) 사이클로펜타디엔(Cp)에 C4 ~ C6의 알킬기(R1)-할로겐(X) 화합물을 첨가하여, Cp-R1으로 표시되는 제1화합물을 형성하는 단계; (b) 상기 Cp-R1으로 표시되는 제1화합물에 알칼리 금속 화합물 및 제1유기용매를 첨가한 후, 할로겐(X)-금속(M) 화합물 및 제2유기용매를 첨가하여 M(Cp-R1)3-yXy (y = 0 또는 1이다.)로 표시되는 제2화합물을 형성하는 단계; 및 (c) 상기 M(Cp-R1)3-yXy로 표시되는 제2화합물에 제3유기용매 및 리간드를 첨가하여 금속 전구체를 제조하는 단계;를 포함하는 것을 특징으로 한다.</description><subject>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>ORGANIC CHEMISTRY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZEj38w9z9VHwdQ1x9FEICHJ1Dg0K9g9ScINgX08_d4UQD08_BTdPH1-F0GAQ3znS2cc_wNUvxNHF09XPVcHRzwWk38PfBazN19Ev1M3ROSQ0CKLZVSHY0deVh4E1LTGnOJUXSnMzKLu5hjh76KYW5MenFhckJqfmpZbEewcZGhiZG5mZmBg6ORkaE6cKAMkrNks</recordid><startdate>20241105</startdate><enddate>20241105</enddate><creator>LEE JANG JUN</creator><creator>KIM SUNG MIN</creator><creator>KO SEUNG HWAN</creator><creator>PARK SEONG HO</creator><creator>KIM YOUNG MIN</creator><creator>LEE CHANG YEOB</creator><scope>EVB</scope></search><sort><creationdate>20241105</creationdate><title>NOVEL METAL PRECURSOR FOR FORMING THIN FILM USING CYCLOPENTADIENE AND METHOD FOR MANUFACTURING THE SAME</title><author>LEE JANG JUN ; KIM SUNG MIN ; KO SEUNG HWAN ; PARK SEONG HO ; KIM YOUNG MIN ; LEE CHANG YEOB</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR102726441BB13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2024</creationdate><topic>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>ORGANIC CHEMISTRY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE JANG JUN</creatorcontrib><creatorcontrib>KIM SUNG MIN</creatorcontrib><creatorcontrib>KO SEUNG HWAN</creatorcontrib><creatorcontrib>PARK SEONG HO</creatorcontrib><creatorcontrib>KIM YOUNG MIN</creatorcontrib><creatorcontrib>LEE CHANG YEOB</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE JANG JUN</au><au>KIM SUNG MIN</au><au>KO SEUNG HWAN</au><au>PARK SEONG HO</au><au>KIM YOUNG MIN</au><au>LEE CHANG YEOB</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>NOVEL METAL PRECURSOR FOR FORMING THIN FILM USING CYCLOPENTADIENE AND METHOD FOR MANUFACTURING THE SAME</title><date>2024-11-05</date><risdate>2024</risdate><abstract>사이클로펜타디엔을 이용한 신규한 박막 형성용 금속 전구체 및 그 제조 방법에 대하여 개시한다. 본 발명에 따른 본 발명에 따른 금속 전구체의 제조 방법은 (a) 사이클로펜타디엔(Cp)에 C4 ~ C6의 알킬기(R1)-할로겐(X) 화합물을 첨가하여, Cp-R1으로 표시되는 제1화합물을 형성하는 단계; (b) 상기 Cp-R1으로 표시되는 제1화합물에 알칼리 금속 화합물 및 제1유기용매를 첨가한 후, 할로겐(X)-금속(M) 화합물 및 제2유기용매를 첨가하여 M(Cp-R1)3-yXy (y = 0 또는 1이다.)로 표시되는 제2화합물을 형성하는 단계; 및 (c) 상기 M(Cp-R1)3-yXy로 표시되는 제2화합물에 제3유기용매 및 리간드를 첨가하여 금속 전구체를 제조하는 단계;를 포함하는 것을 특징으로 한다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | NOVEL METAL PRECURSOR FOR FORMING THIN FILM USING CYCLOPENTADIENE AND METHOD FOR MANUFACTURING THE SAME |
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