LED METHOD FOR FORMING SEMICONDUCTOR LAYER FOR LIGHT EMITTING DEVICE ON SUBSTRATE AND SEMICONDUCTOR LIGHT DEVICE USING THEREOF

An objective of the present invention is to provide a method for forming a semiconductor layer for an LED and a semiconductor light-emitting device manufactured by the same which allow continuous epitaxial growth of GaN-based and GaAs-based materials with different crystal structures on a single waf...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	PARK KWANG WOOK, CHAN SOO SHIN, JANG HYUN CHUL, JEHYUK CHOI, PARK HYEONG HO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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