Semiconductor reactor and method of forming coating layer on metallic substrate for semiconductor reactor
According to one aspect of the present invention, a method of forming a coating layer on parent metal for a semiconductor reactor comprises the following steps: supporting parent metal for a semiconductor reactor on an alkaline aqueous electrolyte containing NaOH and NaAlO2; and connecting an electr...
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creator | YU, BYUNG YONG HAN, SEUNG HEE DOH, JUNG MAN YOON, JIN KOOK CHOI, YOUNG JUN |
description | According to one aspect of the present invention, a method of forming a coating layer on parent metal for a semiconductor reactor comprises the following steps: supporting parent metal for a semiconductor reactor on an alkaline aqueous electrolyte containing NaOH and NaAlO2; and connecting an electrode to the parent metal and supplying power to the electrode to form a coating layer on the parent metal by plasma electrolytic oxidation (PEO). Therefore, the method can reduce internal contamination of the semiconductor reactor.
본 발명의 일 관점에 따른 반도체 반응기용 금속모재 상의 코팅층 형성방법은 반도체 반응기용 금속모재를 NaOH 및 NaAlO를 포함하는 알칼리 수용액성 전해액에 담지하는 단계; 및 상기 금속모재에 전극을 연결하고 상기 전극에 전원을 공급하여, 플라즈마 전해 산화(plasma electrolytic oxidation, PEO)법으로 상기 금속모재 상에 코팅층을 형성하는 단계를 포함한다. |
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본 발명의 일 관점에 따른 반도체 반응기용 금속모재 상의 코팅층 형성방법은 반도체 반응기용 금속모재를 NaOH 및 NaAlO를 포함하는 알칼리 수용액성 전해액에 담지하는 단계; 및 상기 금속모재에 전극을 연결하고 상기 전극에 전원을 공급하여, 플라즈마 전해 산화(plasma electrolytic oxidation, PEO)법으로 상기 금속모재 상에 코팅층을 형성하는 단계를 포함한다.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PLASMA TECHNIQUE ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180712&DB=EPODOC&CC=KR&NR=101877017B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180712&DB=EPODOC&CC=KR&NR=101877017B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YU, BYUNG YONG</creatorcontrib><creatorcontrib>HAN, SEUNG HEE</creatorcontrib><creatorcontrib>DOH, JUNG MAN</creatorcontrib><creatorcontrib>YOON, JIN KOOK</creatorcontrib><creatorcontrib>CHOI, YOUNG JUN</creatorcontrib><title>Semiconductor reactor and method of forming coating layer on metallic substrate for semiconductor reactor</title><description>According to one aspect of the present invention, a method of forming a coating layer on parent metal for a semiconductor reactor comprises the following steps: supporting parent metal for a semiconductor reactor on an alkaline aqueous electrolyte containing NaOH and NaAlO2; and connecting an electrode to the parent metal and supplying power to the electrode to form a coating layer on the parent metal by plasma electrolytic oxidation (PEO). Therefore, the method can reduce internal contamination of the semiconductor reactor.
본 발명의 일 관점에 따른 반도체 반응기용 금속모재 상의 코팅층 형성방법은 반도체 반응기용 금속모재를 NaOH 및 NaAlO를 포함하는 알칼리 수용액성 전해액에 담지하는 단계; 및 상기 금속모재에 전극을 연결하고 상기 전극에 전원을 공급하여, 플라즈마 전해 산화(plasma electrolytic oxidation, PEO)법으로 상기 금속모재 상에 코팅층을 형성하는 단계를 포함한다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PLASMA TECHNIQUE</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzDEKAjEQQNE0FqLeYcBa2GAR6xVFsFP7ZUwmGkgySzJbeHuJWFpY_ebx5ypcKQXL2U1WuEAh_BSzg0TyZAfswXNJIT_AMkprxBcV4NwIxhgs1OlepaBQs1B_PZdq5jFWWn27UOvj4bY_bWjkgeqIljLJcL7oTu-M6bTpe739T70BsuBCew</recordid><startdate>20180712</startdate><enddate>20180712</enddate><creator>YU, BYUNG YONG</creator><creator>HAN, SEUNG HEE</creator><creator>DOH, JUNG MAN</creator><creator>YOON, JIN KOOK</creator><creator>CHOI, YOUNG JUN</creator><scope>EVB</scope></search><sort><creationdate>20180712</creationdate><title>Semiconductor reactor and method of forming coating layer on metallic substrate for semiconductor reactor</title><author>YU, BYUNG YONG ; HAN, SEUNG HEE ; DOH, JUNG MAN ; YOON, JIN KOOK ; CHOI, YOUNG JUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR101877017BB13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PLASMA TECHNIQUE</topic><topic>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</topic><topic>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YU, BYUNG YONG</creatorcontrib><creatorcontrib>HAN, SEUNG HEE</creatorcontrib><creatorcontrib>DOH, JUNG MAN</creatorcontrib><creatorcontrib>YOON, JIN KOOK</creatorcontrib><creatorcontrib>CHOI, YOUNG JUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YU, BYUNG YONG</au><au>HAN, SEUNG HEE</au><au>DOH, JUNG MAN</au><au>YOON, JIN KOOK</au><au>CHOI, YOUNG JUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor reactor and method of forming coating layer on metallic substrate for semiconductor reactor</title><date>2018-07-12</date><risdate>2018</risdate><abstract>According to one aspect of the present invention, a method of forming a coating layer on parent metal for a semiconductor reactor comprises the following steps: supporting parent metal for a semiconductor reactor on an alkaline aqueous electrolyte containing NaOH and NaAlO2; and connecting an electrode to the parent metal and supplying power to the electrode to form a coating layer on the parent metal by plasma electrolytic oxidation (PEO). Therefore, the method can reduce internal contamination of the semiconductor reactor.
본 발명의 일 관점에 따른 반도체 반응기용 금속모재 상의 코팅층 형성방법은 반도체 반응기용 금속모재를 NaOH 및 NaAlO를 포함하는 알칼리 수용액성 전해액에 담지하는 단계; 및 상기 금속모재에 전극을 연결하고 상기 전극에 전원을 공급하여, 플라즈마 전해 산화(plasma electrolytic oxidation, PEO)법으로 상기 금속모재 상에 코팅층을 형성하는 단계를 포함한다.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES |
title | Semiconductor reactor and method of forming coating layer on metallic substrate for semiconductor reactor |
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