Semiconductor reactor and method of forming coating layer on metallic substrate for semiconductor reactor

According to one aspect of the present invention, a method of forming a coating layer on parent metal for a semiconductor reactor comprises the following steps: supporting parent metal for a semiconductor reactor on an alkaline aqueous electrolyte containing NaOH and NaAlO2; and connecting an electr...

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Bibliographische Detailangaben
Hauptverfasser:	YU, BYUNG YONG, HAN, SEUNG HEE, DOH, JUNG MAN, YOON, JIN KOOK, CHOI, YOUNG JUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	According to one aspect of the present invention, a method of forming a coating layer on parent metal for a semiconductor reactor comprises the following steps: supporting parent metal for a semiconductor reactor on an alkaline aqueous electrolyte containing NaOH and NaAlO2; and connecting an electrode to the parent metal and supplying power to the electrode to form a coating layer on the parent metal by plasma electrolytic oxidation (PEO). Therefore, the method can reduce internal contamination of the semiconductor reactor. 본 발명의 일 관점에 따른 반도체 반응기용 금속모재 상의 코팅층 형성방법은 반도체 반응기용 금속모재를 NaOH 및 NaAlO를 포함하는 알칼리 수용액성 전해액에 담지하는 단계; 및 상기 금속모재에 전극을 연결하고 상기 전극에 전원을 공급하여, 플라즈마 전해 산화(plasma electrolytic oxidation, PEO)법으로 상기 금속모재 상에 코팅층을 형성하는 단계를 포함한다.