1 2 PLASMA DEVICE

The plasma device of the present invention may include a chamber for accommodating a workpiece to be plasma-processed; a first antenna and a second antenna disposed on one side of the chamber and exciting plasma in the chamber by the application of high frequency power. The first antenna may be rota...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: SUH, KEE WON
Format: Patent
Sprache:eng ; kor
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator SUH, KEE WON
description The plasma device of the present invention may include a chamber for accommodating a workpiece to be plasma-processed; a first antenna and a second antenna disposed on one side of the chamber and exciting plasma in the chamber by the application of high frequency power. The first antenna may be rotated relative to the chamber. The second antenna may be rotatably coupled to the chamber with respect to the first antenna or the chamber. Plasma processing can be performed uniformly on the workpiece according to a processing environment. 본 발명의 플라즈마 장치는, 플라즈마 가공되는 가공물이 수용되는 챔버; 상기 챔버의 일측에 배치되고, 고주파 전력의 인가에 의해 상기 챔버 내에 플라즈마를 여기시키는 제1 안테나 및 제2 안테나; 를 포함할 수 있고, 상기 제1 안테나는 상기 챔버에 대해 회전될 수 있고, 상기 제2 안테나는 상기 제1 안테나 또는 상기 챔버에 대해 회전 가능하게 상기 챔버에 결합될 수 있다.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR101840295BB1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR101840295BB1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR101840295BB13</originalsourceid><addsrcrecordid>eNrjZBA0VDBSCPBxDPZ1VHBxDfN0duVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHeQYYGhhYmBkaWpk5OhsbEqQIAWJweKQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>1 2 PLASMA DEVICE</title><source>esp@cenet</source><creator>SUH, KEE WON</creator><creatorcontrib>SUH, KEE WON</creatorcontrib><description>The plasma device of the present invention may include a chamber for accommodating a workpiece to be plasma-processed; a first antenna and a second antenna disposed on one side of the chamber and exciting plasma in the chamber by the application of high frequency power. The first antenna may be rotated relative to the chamber. The second antenna may be rotatably coupled to the chamber with respect to the first antenna or the chamber. Plasma processing can be performed uniformly on the workpiece according to a processing environment. 본 발명의 플라즈마 장치는, 플라즈마 가공되는 가공물이 수용되는 챔버; 상기 챔버의 일측에 배치되고, 고주파 전력의 인가에 의해 상기 챔버 내에 플라즈마를 여기시키는 제1 안테나 및 제2 안테나; 를 포함할 수 있고, 상기 제1 안테나는 상기 챔버에 대해 회전될 수 있고, 상기 제2 안테나는 상기 제1 안테나 또는 상기 챔버에 대해 회전 가능하게 상기 챔버에 결합될 수 있다.</description><language>eng ; kor</language><subject>ANTENNAS, i.e. RADIO AERIALS ; BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20180320&amp;DB=EPODOC&amp;CC=KR&amp;NR=101840295B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20180320&amp;DB=EPODOC&amp;CC=KR&amp;NR=101840295B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SUH, KEE WON</creatorcontrib><title>1 2 PLASMA DEVICE</title><description>The plasma device of the present invention may include a chamber for accommodating a workpiece to be plasma-processed; a first antenna and a second antenna disposed on one side of the chamber and exciting plasma in the chamber by the application of high frequency power. The first antenna may be rotated relative to the chamber. The second antenna may be rotatably coupled to the chamber with respect to the first antenna or the chamber. Plasma processing can be performed uniformly on the workpiece according to a processing environment. 본 발명의 플라즈마 장치는, 플라즈마 가공되는 가공물이 수용되는 챔버; 상기 챔버의 일측에 배치되고, 고주파 전력의 인가에 의해 상기 챔버 내에 플라즈마를 여기시키는 제1 안테나 및 제2 안테나; 를 포함할 수 있고, 상기 제1 안테나는 상기 챔버에 대해 회전될 수 있고, 상기 제2 안테나는 상기 제1 안테나 또는 상기 챔버에 대해 회전 가능하게 상기 챔버에 결합될 수 있다.</description><subject>ANTENNAS, i.e. RADIO AERIALS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBA0VDBSCPBxDPZ1VHBxDfN0duVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHeQYYGhhYmBkaWpk5OhsbEqQIAWJweKQ</recordid><startdate>20180320</startdate><enddate>20180320</enddate><creator>SUH, KEE WON</creator><scope>EVB</scope></search><sort><creationdate>20180320</creationdate><title>1 2 PLASMA DEVICE</title><author>SUH, KEE WON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR101840295BB13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2018</creationdate><topic>ANTENNAS, i.e. RADIO AERIALS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>SUH, KEE WON</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SUH, KEE WON</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>1 2 PLASMA DEVICE</title><date>2018-03-20</date><risdate>2018</risdate><abstract>The plasma device of the present invention may include a chamber for accommodating a workpiece to be plasma-processed; a first antenna and a second antenna disposed on one side of the chamber and exciting plasma in the chamber by the application of high frequency power. The first antenna may be rotated relative to the chamber. The second antenna may be rotatably coupled to the chamber with respect to the first antenna or the chamber. Plasma processing can be performed uniformly on the workpiece according to a processing environment. 본 발명의 플라즈마 장치는, 플라즈마 가공되는 가공물이 수용되는 챔버; 상기 챔버의 일측에 배치되고, 고주파 전력의 인가에 의해 상기 챔버 내에 플라즈마를 여기시키는 제1 안테나 및 제2 안테나; 를 포함할 수 있고, 상기 제1 안테나는 상기 챔버에 대해 회전될 수 있고, 상기 제2 안테나는 상기 제1 안테나 또는 상기 챔버에 대해 회전 가능하게 상기 챔버에 결합될 수 있다.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; kor
recordid cdi_epo_espacenet_KR101840295BB1
source esp@cenet
subjects ANTENNAS, i.e. RADIO AERIALS
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
title 1 2 PLASMA DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T00%3A03%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SUH,%20KEE%20WON&rft.date=2018-03-20&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR101840295BB1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true