METHOD OF MAKING A FINFET DEVICE

A FinFET device is manufactured by firstly receiving a FinFET precursor. The FinFET precursor comprises: a substrate, a pin on the substrate, a separation area next to the pin, and a dummy gate stack on the substrate which surrounds a part of the pin called by a gate channel area. The dummy gate stack is removed to form a gate trench. A gate dielectric layer is deposited on the gate trench. A metal stressor layer (MSL) is deposited on the gate dielectric layer. A capping layer is deposited on the MSL. Heat treatment is applied to the MSL to expand volume. The capping layer is removed and a metal gate (MG) is formed on the MSL.