METHOD FOR CREATING TANDEM SOLAR CELL WITH HIGH EFFICIENCY USING SI SUBSTRATE
PURPOSE: A method for producing a tandem solar cell with high efficiency using a Si substrate is provided to reduce the number of processes and product costs by forming a nanowire layer. CONSTITUTION: A p/n-GaAs epi is formed on one side of the p+-Si of an n/p-silicon substrate (S10). An n+-Si surfa...
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| creator | KIM, HYO JIN OH, SI DUCK KIM, HWE JONG SHIN, JAE CHEOL |
| description | PURPOSE: A method for producing a tandem solar cell with high efficiency using a Si substrate is provided to reduce the number of processes and product costs by forming a nanowire layer. CONSTITUTION: A p/n-GaAs epi is formed on one side of the p+-Si of an n/p-silicon substrate (S10). An n+-Si surface is formed on the other side of the n/p-silicon substrate. A p/n-InGaAs nanowire is formed on the n+-Si surface. The p/n-InGaAs nanowire has small energy bandgap. A p/n-Ge junction process is performed on the upper part of the nanowire (S20). [Reference numerals] (AA) Start; (BB) End; (S10) p/n-GaAs epi is formed on one upper side of the p+-Si of an n/p-silicon substrate; (S20) p/n-InGaAs nanowire, of which energy band gap is smaller than that of Si, is formed on the n+-Si surface which is another side of the n/p-Si substrate, and a p/n-Ge junction process is performed on the upper part of the nanowire |
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CONSTITUTION: A p/n-GaAs epi is formed on one side of the p+-Si of an n/p-silicon substrate (S10). An n+-Si surface is formed on the other side of the n/p-silicon substrate. A p/n-InGaAs nanowire is formed on the n+-Si surface. The p/n-InGaAs nanowire has small energy bandgap. A p/n-Ge junction process is performed on the upper part of the nanowire (S20). [Reference numerals] (AA) Start; (BB) End; (S10) p/n-GaAs epi is formed on one upper side of the p+-Si of an n/p-silicon substrate; (S20) p/n-InGaAs nanowire, of which energy band gap is smaller than that of Si, is formed on the n+-Si surface which is another side of the n/p-Si substrate, and a p/n-Ge junction process is performed on the upper part of the nanowire</abstract><oa>free_for_read</oa></addata></record> |
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| title | METHOD FOR CREATING TANDEM SOLAR CELL WITH HIGH EFFICIENCY USING SI SUBSTRATE |
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