SYSTEM FOR REFINING HIGHLY CONCENTRATED PHOSPHORIC ACID USING WASTE LIQUID FROM ETCHING PROCESS AND METHOD FOR REFINING THEREOF

PURPOSE: To provide a system for refining highly concentrated phosphoric acid from waste liquid from a manufacturing process of semiconductor or liquid crystalline display device and a method for refining thereof. CONSTITUTION: The system using waste liquid from etching process including 50-70 wt.%...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KWON, KEUN SUB, KANG, KYUNG HEE, KIM, SUNG HWA
Format: Patent
Sprache:eng ; kor
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator KWON, KEUN SUB
KANG, KYUNG HEE
KIM, SUNG HWA
description PURPOSE: To provide a system for refining highly concentrated phosphoric acid from waste liquid from a manufacturing process of semiconductor or liquid crystalline display device and a method for refining thereof. CONSTITUTION: The system using waste liquid from etching process including 50-70 wt.% of phosphoric acid, 10-30 wt.% of acetic acid, 5-10 wt.% of nitric acid and the remaining amount of water comprises a waste liquid storage part (101) which stores the waste liquid from etching process, a vacuum concentration reaction part (102) which condenses the waste liquid at the temperature of 90-118 deg.C under pressure of 300-700 mmHg to separate a lower layer of a highly concentrated phosphoric acid solution from an upper layer of a side product and a phosphoric acid solution storage part (105) which extracts the highly concentrated phosphoric acid solution from the vacuum concentration reaction part and then stores it.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR100461849BB1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR100461849BB1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR100461849BB13</originalsourceid><addsrcrecordid>eNqNTbsKwjAU7eIg6j9ccBZaLKJjmtw0wTZpb1KkUykSJ9FC3f11W3BxczgcOM9l9Hat81iCtASEUhttclA6V0UL3BqOxhPzKKBS1k0gzYFxLaBxc_LCpjYUum4mSZItAT1Xs1OR5egcMCOgRK-s-P3wCgmtXEeLW38fw-bLq2gr54ldGJ5dGIf-Gh7h1Z0pieP0kBzTU5Yl-_9SHzx5PPo</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SYSTEM FOR REFINING HIGHLY CONCENTRATED PHOSPHORIC ACID USING WASTE LIQUID FROM ETCHING PROCESS AND METHOD FOR REFINING THEREOF</title><source>esp@cenet</source><creator>KWON, KEUN SUB ; KANG, KYUNG HEE ; KIM, SUNG HWA</creator><creatorcontrib>KWON, KEUN SUB ; KANG, KYUNG HEE ; KIM, SUNG HWA</creatorcontrib><description>PURPOSE: To provide a system for refining highly concentrated phosphoric acid from waste liquid from a manufacturing process of semiconductor or liquid crystalline display device and a method for refining thereof. CONSTITUTION: The system using waste liquid from etching process including 50-70 wt.% of phosphoric acid, 10-30 wt.% of acetic acid, 5-10 wt.% of nitric acid and the remaining amount of water comprises a waste liquid storage part (101) which stores the waste liquid from etching process, a vacuum concentration reaction part (102) which condenses the waste liquid at the temperature of 90-118 deg.C under pressure of 300-700 mmHg to separate a lower layer of a highly concentrated phosphoric acid solution from an upper layer of a side product and a phosphoric acid solution storage part (105) which extracts the highly concentrated phosphoric acid solution from the vacuum concentration reaction part and then stores it.</description><edition>7</edition><language>eng ; kor</language><subject>CHEMISTRY ; COMPOUNDS THEREOF ; INORGANIC CHEMISTRY ; METALLURGY ; NON-METALLIC ELEMENTS</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20041206&amp;DB=EPODOC&amp;CC=KR&amp;NR=100461849B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20041206&amp;DB=EPODOC&amp;CC=KR&amp;NR=100461849B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KWON, KEUN SUB</creatorcontrib><creatorcontrib>KANG, KYUNG HEE</creatorcontrib><creatorcontrib>KIM, SUNG HWA</creatorcontrib><title>SYSTEM FOR REFINING HIGHLY CONCENTRATED PHOSPHORIC ACID USING WASTE LIQUID FROM ETCHING PROCESS AND METHOD FOR REFINING THEREOF</title><description>PURPOSE: To provide a system for refining highly concentrated phosphoric acid from waste liquid from a manufacturing process of semiconductor or liquid crystalline display device and a method for refining thereof. CONSTITUTION: The system using waste liquid from etching process including 50-70 wt.% of phosphoric acid, 10-30 wt.% of acetic acid, 5-10 wt.% of nitric acid and the remaining amount of water comprises a waste liquid storage part (101) which stores the waste liquid from etching process, a vacuum concentration reaction part (102) which condenses the waste liquid at the temperature of 90-118 deg.C under pressure of 300-700 mmHg to separate a lower layer of a highly concentrated phosphoric acid solution from an upper layer of a side product and a phosphoric acid solution storage part (105) which extracts the highly concentrated phosphoric acid solution from the vacuum concentration reaction part and then stores it.</description><subject>CHEMISTRY</subject><subject>COMPOUNDS THEREOF</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNTbsKwjAU7eIg6j9ccBZaLKJjmtw0wTZpb1KkUykSJ9FC3f11W3BxczgcOM9l9Hat81iCtASEUhttclA6V0UL3BqOxhPzKKBS1k0gzYFxLaBxc_LCpjYUum4mSZItAT1Xs1OR5egcMCOgRK-s-P3wCgmtXEeLW38fw-bLq2gr54ldGJ5dGIf-Gh7h1Z0pieP0kBzTU5Yl-_9SHzx5PPo</recordid><startdate>20041206</startdate><enddate>20041206</enddate><creator>KWON, KEUN SUB</creator><creator>KANG, KYUNG HEE</creator><creator>KIM, SUNG HWA</creator><scope>EVB</scope></search><sort><creationdate>20041206</creationdate><title>SYSTEM FOR REFINING HIGHLY CONCENTRATED PHOSPHORIC ACID USING WASTE LIQUID FROM ETCHING PROCESS AND METHOD FOR REFINING THEREOF</title><author>KWON, KEUN SUB ; KANG, KYUNG HEE ; KIM, SUNG HWA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR100461849BB13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2004</creationdate><topic>CHEMISTRY</topic><topic>COMPOUNDS THEREOF</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><toplevel>online_resources</toplevel><creatorcontrib>KWON, KEUN SUB</creatorcontrib><creatorcontrib>KANG, KYUNG HEE</creatorcontrib><creatorcontrib>KIM, SUNG HWA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KWON, KEUN SUB</au><au>KANG, KYUNG HEE</au><au>KIM, SUNG HWA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SYSTEM FOR REFINING HIGHLY CONCENTRATED PHOSPHORIC ACID USING WASTE LIQUID FROM ETCHING PROCESS AND METHOD FOR REFINING THEREOF</title><date>2004-12-06</date><risdate>2004</risdate><abstract>PURPOSE: To provide a system for refining highly concentrated phosphoric acid from waste liquid from a manufacturing process of semiconductor or liquid crystalline display device and a method for refining thereof. CONSTITUTION: The system using waste liquid from etching process including 50-70 wt.% of phosphoric acid, 10-30 wt.% of acetic acid, 5-10 wt.% of nitric acid and the remaining amount of water comprises a waste liquid storage part (101) which stores the waste liquid from etching process, a vacuum concentration reaction part (102) which condenses the waste liquid at the temperature of 90-118 deg.C under pressure of 300-700 mmHg to separate a lower layer of a highly concentrated phosphoric acid solution from an upper layer of a side product and a phosphoric acid solution storage part (105) which extracts the highly concentrated phosphoric acid solution from the vacuum concentration reaction part and then stores it.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; kor
recordid cdi_epo_espacenet_KR100461849BB1
source esp@cenet
subjects CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
title SYSTEM FOR REFINING HIGHLY CONCENTRATED PHOSPHORIC ACID USING WASTE LIQUID FROM ETCHING PROCESS AND METHOD FOR REFINING THEREOF
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-19T13%3A46%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KWON,%20KEUN%20SUB&rft.date=2004-12-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR100461849BB1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true