METHOD FOR FORMING BARRIER METAL FILM OF SEMICONDUCTOR DEVICE
PURPOSE: A method for forming a barrier metal film of a semiconductor device is provided to obtain stable shallow junction by using multiple stacked structure of titanium nitride oxide as a diffusion barrier layer. CONSTITUTION: A contact hole is formed by patterning an insulating layer(13) to expos...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; kor |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | JANG, HYEON JIN HONG, TAEK GI HONG, HEUNG GI |
| description | PURPOSE: A method for forming a barrier metal film of a semiconductor device is provided to obtain stable shallow junction by using multiple stacked structure of titanium nitride oxide as a diffusion barrier layer. CONSTITUTION: A contact hole is formed by patterning an insulating layer(13) to expose a junction region(12) of a silicon substrate(11). A titanium film(14) is formed on the exposed junction region. The first titanium nitride oxide layer(15) is formed on the titanium film. A titanium nitride layer(16) is formed on the first titanium nitride oxide layer. The second titanium nitride oxide layer(17) is formed on the titanium nitride layer. Then, a metal film is formed on the resultant structure.
본 발명은 반도체 소자의 베리어 금속층 형성방법을 제공하는 것으로 다수의 튜브를 구비한 반응로를 이용하여 상기 실리콘기판상에 산화 티타늄 나이트라이드층을 다중 적층구조로 형성하여 확산베리어 금속층으로서의 확실한 역할을 할 뿐만 아니라 후속공정의 고온 열공정에서도 잘 견딜 수 있어 안정한 쉘로우 접합을 형성하므로써 소자의 수율을 향상시 킬 수 있는 효과가 있다. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR100399978BB1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR100399978BB1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR100399978BB13</originalsourceid><addsrcrecordid>eNrjZLD1dQ3x8HdRcPMPAmFfTz93BSfHoCBP1yAFoJSjj4Kbp4-vgr-bQrCrr6ezv59LqHMIUK2La5insysPA2taYk5xKi-U5mZQdnMNcfbQTS3Ij08tLkhMTs1LLYn3DjI0MDC2tLQ0t3ByMjQmThUAwj4qxA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR FORMING BARRIER METAL FILM OF SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>JANG, HYEON JIN ; HONG, TAEK GI ; HONG, HEUNG GI</creator><creatorcontrib>JANG, HYEON JIN ; HONG, TAEK GI ; HONG, HEUNG GI</creatorcontrib><description>PURPOSE: A method for forming a barrier metal film of a semiconductor device is provided to obtain stable shallow junction by using multiple stacked structure of titanium nitride oxide as a diffusion barrier layer. CONSTITUTION: A contact hole is formed by patterning an insulating layer(13) to expose a junction region(12) of a silicon substrate(11). A titanium film(14) is formed on the exposed junction region. The first titanium nitride oxide layer(15) is formed on the titanium film. A titanium nitride layer(16) is formed on the first titanium nitride oxide layer. The second titanium nitride oxide layer(17) is formed on the titanium nitride layer. Then, a metal film is formed on the resultant structure.
본 발명은 반도체 소자의 베리어 금속층 형성방법을 제공하는 것으로 다수의 튜브를 구비한 반응로를 이용하여 상기 실리콘기판상에 산화 티타늄 나이트라이드층을 다중 적층구조로 형성하여 확산베리어 금속층으로서의 확실한 역할을 할 뿐만 아니라 후속공정의 고온 열공정에서도 잘 견딜 수 있어 안정한 쉘로우 접합을 형성하므로써 소자의 수율을 향상시 킬 수 있는 효과가 있다.</description><edition>7</edition><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20031218&DB=EPODOC&CC=KR&NR=100399978B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20031218&DB=EPODOC&CC=KR&NR=100399978B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JANG, HYEON JIN</creatorcontrib><creatorcontrib>HONG, TAEK GI</creatorcontrib><creatorcontrib>HONG, HEUNG GI</creatorcontrib><title>METHOD FOR FORMING BARRIER METAL FILM OF SEMICONDUCTOR DEVICE</title><description>PURPOSE: A method for forming a barrier metal film of a semiconductor device is provided to obtain stable shallow junction by using multiple stacked structure of titanium nitride oxide as a diffusion barrier layer. CONSTITUTION: A contact hole is formed by patterning an insulating layer(13) to expose a junction region(12) of a silicon substrate(11). A titanium film(14) is formed on the exposed junction region. The first titanium nitride oxide layer(15) is formed on the titanium film. A titanium nitride layer(16) is formed on the first titanium nitride oxide layer. The second titanium nitride oxide layer(17) is formed on the titanium nitride layer. Then, a metal film is formed on the resultant structure.
본 발명은 반도체 소자의 베리어 금속층 형성방법을 제공하는 것으로 다수의 튜브를 구비한 반응로를 이용하여 상기 실리콘기판상에 산화 티타늄 나이트라이드층을 다중 적층구조로 형성하여 확산베리어 금속층으로서의 확실한 역할을 할 뿐만 아니라 후속공정의 고온 열공정에서도 잘 견딜 수 있어 안정한 쉘로우 접합을 형성하므로써 소자의 수율을 향상시 킬 수 있는 효과가 있다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD1dQ3x8HdRcPMPAmFfTz93BSfHoCBP1yAFoJSjj4Kbp4-vgr-bQrCrr6ezv59LqHMIUK2La5insysPA2taYk5xKi-U5mZQdnMNcfbQTS3Ij08tLkhMTs1LLYn3DjI0MDC2tLQ0t3ByMjQmThUAwj4qxA</recordid><startdate>20031218</startdate><enddate>20031218</enddate><creator>JANG, HYEON JIN</creator><creator>HONG, TAEK GI</creator><creator>HONG, HEUNG GI</creator><scope>EVB</scope></search><sort><creationdate>20031218</creationdate><title>METHOD FOR FORMING BARRIER METAL FILM OF SEMICONDUCTOR DEVICE</title><author>JANG, HYEON JIN ; HONG, TAEK GI ; HONG, HEUNG GI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR100399978BB13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2003</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>JANG, HYEON JIN</creatorcontrib><creatorcontrib>HONG, TAEK GI</creatorcontrib><creatorcontrib>HONG, HEUNG GI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JANG, HYEON JIN</au><au>HONG, TAEK GI</au><au>HONG, HEUNG GI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR FORMING BARRIER METAL FILM OF SEMICONDUCTOR DEVICE</title><date>2003-12-18</date><risdate>2003</risdate><abstract>PURPOSE: A method for forming a barrier metal film of a semiconductor device is provided to obtain stable shallow junction by using multiple stacked structure of titanium nitride oxide as a diffusion barrier layer. CONSTITUTION: A contact hole is formed by patterning an insulating layer(13) to expose a junction region(12) of a silicon substrate(11). A titanium film(14) is formed on the exposed junction region. The first titanium nitride oxide layer(15) is formed on the titanium film. A titanium nitride layer(16) is formed on the first titanium nitride oxide layer. The second titanium nitride oxide layer(17) is formed on the titanium nitride layer. Then, a metal film is formed on the resultant structure.
본 발명은 반도체 소자의 베리어 금속층 형성방법을 제공하는 것으로 다수의 튜브를 구비한 반응로를 이용하여 상기 실리콘기판상에 산화 티타늄 나이트라이드층을 다중 적층구조로 형성하여 확산베리어 금속층으로서의 확실한 역할을 할 뿐만 아니라 후속공정의 고온 열공정에서도 잘 견딜 수 있어 안정한 쉘로우 접합을 형성하므로써 소자의 수율을 향상시 킬 수 있는 효과가 있다.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; kor |
| recordid | cdi_epo_espacenet_KR100399978BB1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHOD FOR FORMING BARRIER METAL FILM OF SEMICONDUCTOR DEVICE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T23%3A04%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=JANG,%20HYEON%20JIN&rft.date=2003-12-18&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR100399978BB1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |