METHOD FOR FORMING BARRIER METAL FILM OF SEMICONDUCTOR DEVICE
PURPOSE: A method for forming a barrier metal film of a semiconductor device is provided to obtain stable shallow junction by using multiple stacked structure of titanium nitride oxide as a diffusion barrier layer. CONSTITUTION: A contact hole is formed by patterning an insulating layer(13) to expos...
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | PURPOSE: A method for forming a barrier metal film of a semiconductor device is provided to obtain stable shallow junction by using multiple stacked structure of titanium nitride oxide as a diffusion barrier layer. CONSTITUTION: A contact hole is formed by patterning an insulating layer(13) to expose a junction region(12) of a silicon substrate(11). A titanium film(14) is formed on the exposed junction region. The first titanium nitride oxide layer(15) is formed on the titanium film. A titanium nitride layer(16) is formed on the first titanium nitride oxide layer. The second titanium nitride oxide layer(17) is formed on the titanium nitride layer. Then, a metal film is formed on the resultant structure.
본 발명은 반도체 소자의 베리어 금속층 형성방법을 제공하는 것으로 다수의 튜브를 구비한 반응로를 이용하여 상기 실리콘기판상에 산화 티타늄 나이트라이드층을 다중 적층구조로 형성하여 확산베리어 금속층으로서의 확실한 역할을 할 뿐만 아니라 후속공정의 고온 열공정에서도 잘 견딜 수 있어 안정한 쉘로우 접합을 형성하므로써 소자의 수율을 향상시 킬 수 있는 효과가 있다. |
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