HIGH PERFORMANCE GAAS FIELD EFFECT TRANSISTOR STRUCTURE

PURPOSE: A high performance arsenic field effect transistor structure is provided to improve a device linearility, reduce a drain current hysterisis and provide a higher gain around MESFET pinch-off voltage. CONSTITUTION: A high performance arsenic field effect transistor structure includes a GaAs s...

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Bibliographische Detailangaben

1. Verfasser:	LEE, JONG-BOONG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
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