LCD AND ITS FABRICATION METHOD
PURPOSE: A liquid crystal display and a method for fabricating the same are to achieve a high numerical aperture of the liquid crystal display, and reduce the influence of an adjacent pixel electrode. CONSTITUTION: A plurality of gate lines(12) is arranged on a lower substrate in a form of matrix, a...
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creator | LIM, HONAM KWON, SUNGIL LEE, JUNGYEOL |
description | PURPOSE: A liquid crystal display and a method for fabricating the same are to achieve a high numerical aperture of the liquid crystal display, and reduce the influence of an adjacent pixel electrode. CONSTITUTION: A plurality of gate lines(12) is arranged on a lower substrate in a form of matrix, and defines the first and second unit cells(C1,C2). A storage electrode(13) is formed to correspond with each unit cell. A semiconductor layer(15) is formed on a predetermined part of the gate line to correspond with each unit cell. A data line(16) is arranged in the column direction to cross the gate line, thereby defining each unit cell. Pixel electrodes(19-1,19-2) are formed at the space between the unit cells surrounded by the gate line and the data line. The pixel electrodes are contacted with a conductive pattern(17-1,17-2) and a source electrode of a thin film transistor. Each pixel electrode is formed to be overlapped with the corresponding data line and the gate line. |
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CONSTITUTION: A plurality of gate lines(12) is arranged on a lower substrate in a form of matrix, and defines the first and second unit cells(C1,C2). A storage electrode(13) is formed to correspond with each unit cell. A semiconductor layer(15) is formed on a predetermined part of the gate line to correspond with each unit cell. A data line(16) is arranged in the column direction to cross the gate line, thereby defining each unit cell. Pixel electrodes(19-1,19-2) are formed at the space between the unit cells surrounded by the gate line and the data line. The pixel electrodes are contacted with a conductive pattern(17-1,17-2) and a source electrode of a thin film transistor. 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CONSTITUTION: A plurality of gate lines(12) is arranged on a lower substrate in a form of matrix, and defines the first and second unit cells(C1,C2). A storage electrode(13) is formed to correspond with each unit cell. A semiconductor layer(15) is formed on a predetermined part of the gate line to correspond with each unit cell. A data line(16) is arranged in the column direction to cross the gate line, thereby defining each unit cell. Pixel electrodes(19-1,19-2) are formed at the space between the unit cells surrounded by the gate line and the data line. The pixel electrodes are contacted with a conductive pattern(17-1,17-2) and a source electrode of a thin film transistor. Each pixel electrode is formed to be overlapped with the corresponding data line and the gate line.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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subjects | DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
title | LCD AND ITS FABRICATION METHOD |
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