SEMICONDUCTOR LASER

[과제] 리지부양측 부근에서 발샹하는 발광흡수를 방지하고, 레이저 특성이 우수한 반도체 레이저 및 그 제조방법을 제공한다. [해결수단] 리지형상으로 성형된 클래드층(4)과, 이 리지부(41)의 양측에 매립형성된 전류블록층을 구비하고, 전류블록층은 A1 조성X가 0.7보다 큰 AlGa-As층을 초기성장하여 이룬 제1전류블록층(6a)를 가지는 구성으로 한 것이다. A semiconductor laser includes a ridge structure includes a cladding layer having a thermal expansion coefficient. Current blocking structures are disposed at both sides of the ridge structure and include AlxGa1-xAs first current blocking layers having an Al composition x larger than 0.7 and contacting the ridge structure. In this structure, even when the Al composition of the first current blocking layers is reduced at both sides of the ridge structure, the wavelength of light absorbed by the first current blocking layers does not exceed the wavelength of laser light produced in the active layer. Therefore, unwanted absorption of the laser light at both sides of the ridge structure is avoided, resulting in a semiconductor laser with improved laser characteristics.