GAS DISTRIBUTION SYSTEM
Improved apparatus and method for reducing polymer-particle contamination of semiconductor wafers being processed in a system for plasma-etching silicon dioxide. A quartz gas distribution plate (18) contains a number of gas inlet holes (32) having cross-sectional areas sufficiently small to prevent...
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| creator | SALFELDER, JOSEPH F |
| description | Improved apparatus and method for reducing polymer-particle contamination of semiconductor wafers being processed in a system for plasma-etching silicon dioxide. A quartz gas distribution plate (18) contains a number of gas inlet holes (32) having cross-sectional areas sufficiently small to prevent plasma from being present in the gas inlet holes (32) to inhibit formation of polymer material and flaking of contamination particles therefrom. The gas inlet holes (32) are formed on the surface of the quartz gas distribution plate (18) directly over a wafer being processed. Alternatively, the gas inlet holes are formed in the quartz plate to radially extend to the peripheral edge of the quartz plate so that contamination particles, if any, fall outside the bounds of a wafer beneath the quartz plate. The method disclosed includes the step of feeding CHF3 gas through the gas inlet holes (32) having cross-sectional areas sufficiently small to prevent formation of polymer within the holes and subsequent flaking and contamination of a wafer being processed. |
| format | Patent |
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A quartz gas distribution plate (18) contains a number of gas inlet holes (32) having cross-sectional areas sufficiently small to prevent plasma from being present in the gas inlet holes (32) to inhibit formation of polymer material and flaking of contamination particles therefrom. The gas inlet holes (32) are formed on the surface of the quartz gas distribution plate (18) directly over a wafer being processed. Alternatively, the gas inlet holes are formed in the quartz plate to radially extend to the peripheral edge of the quartz plate so that contamination particles, if any, fall outside the bounds of a wafer beneath the quartz plate. The method disclosed includes the step of feeding CHF3 gas through the gas inlet holes (32) having cross-sectional areas sufficiently small to prevent formation of polymer within the holes and subsequent flaking and contamination of a wafer being processed.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; SEMICONDUCTOR DEVICES</subject><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990201&DB=EPODOC&CC=KR&NR=0160288B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990201&DB=EPODOC&CC=KR&NR=0160288B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SALFELDER, JOSEPH F</creatorcontrib><title>GAS DISTRIBUTION SYSTEM</title><description>Improved apparatus and method for reducing polymer-particle contamination of semiconductor wafers being processed in a system for plasma-etching silicon dioxide. A quartz gas distribution plate (18) contains a number of gas inlet holes (32) having cross-sectional areas sufficiently small to prevent plasma from being present in the gas inlet holes (32) to inhibit formation of polymer material and flaking of contamination particles therefrom. The gas inlet holes (32) are formed on the surface of the quartz gas distribution plate (18) directly over a wafer being processed. Alternatively, the gas inlet holes are formed in the quartz plate to radially extend to the peripheral edge of the quartz plate so that contamination particles, if any, fall outside the bounds of a wafer beneath the quartz plate. The method disclosed includes the step of feeding CHF3 gas through the gas inlet holes (32) having cross-sectional areas sufficiently small to prevent formation of polymer within the holes and subsequent flaking and contamination of a wafer being processed.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1999</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBB3dwxWcPEMDgnydAoN8fT3UwiODA5x9eVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHeQQaGZgZGFhZOTobGxKgBAOuEH9A</recordid><startdate>19990201</startdate><enddate>19990201</enddate><creator>SALFELDER, JOSEPH F</creator><scope>EVB</scope></search><sort><creationdate>19990201</creationdate><title>GAS DISTRIBUTION SYSTEM</title><author>SALFELDER, JOSEPH F</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR0160288BB13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1999</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SALFELDER, JOSEPH F</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SALFELDER, JOSEPH F</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>GAS DISTRIBUTION SYSTEM</title><date>1999-02-01</date><risdate>1999</risdate><abstract>Improved apparatus and method for reducing polymer-particle contamination of semiconductor wafers being processed in a system for plasma-etching silicon dioxide. A quartz gas distribution plate (18) contains a number of gas inlet holes (32) having cross-sectional areas sufficiently small to prevent plasma from being present in the gas inlet holes (32) to inhibit formation of polymer material and flaking of contamination particles therefrom. The gas inlet holes (32) are formed on the surface of the quartz gas distribution plate (18) directly over a wafer being processed. Alternatively, the gas inlet holes are formed in the quartz plate to radially extend to the peripheral edge of the quartz plate so that contamination particles, if any, fall outside the bounds of a wafer beneath the quartz plate. The method disclosed includes the step of feeding CHF3 gas through the gas inlet holes (32) having cross-sectional areas sufficiently small to prevent formation of polymer within the holes and subsequent flaking and contamination of a wafer being processed.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES |
| title | GAS DISTRIBUTION SYSTEM |
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