RESONANCE TUNNEL THREE TERMINAL ELEMENT

RESONANCE TUNNEL THREE TERMINAL ELEMENT

PURPOSE:To increase the peak valley ratio in the negative resistance characteristics by a method wherein a base is super latticestructured in the title resonance tunnel three terminal element. CONSTITUTION:A base 14 is structured of super lattice repeatedly laminated with materials C and D. This bas...

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1. Verfasser: YONEMITSU TOSHIHIRO
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description PURPOSE:To increase the peak valley ratio in the negative resistance characteristics by a method wherein a base is super latticestructured in the title resonance tunnel three terminal element. CONSTITUTION:A base 14 is structured of super lattice repeatedly laminated with materials C and D. This base 14 is in contact with an emitter barrier layer 15 through the intermediary of a buffer layer 21 while a base electrode 18 is in contact with the buffer layer 21. In the resonance state, the electrons in an emitter 16 are injected into the base 14 through the resonance level by the tunnel effect further running to a collector 12 through the intermediary of a resonance energy band also by the tunnel effect. Thus, the electrons in the base 14 are not scattered so much compared with any conventional element. In the non-resonance state, the electrons injected into the base 14 which are not resonant with a super lattice structured resonant energy band of the base 14 do not reach the collector 12.
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CONSTITUTION:A base 14 is structured of super lattice repeatedly laminated with materials C and D. This base 14 is in contact with an emitter barrier layer 15 through the intermediary of a buffer layer 21 while a base electrode 18 is in contact with the buffer layer 21. In the resonance state, the electrons in an emitter 16 are injected into the base 14 through the resonance level by the tunnel effect further running to a collector 12 through the intermediary of a resonance energy band also by the tunnel effect. Thus, the electrons in the base 14 are not scattered so much compared with any conventional element. 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CONSTITUTION:A base 14 is structured of super lattice repeatedly laminated with materials C and D. This base 14 is in contact with an emitter barrier layer 15 through the intermediary of a buffer layer 21 while a base electrode 18 is in contact with the buffer layer 21. In the resonance state, the electrons in an emitter 16 are injected into the base 14 through the resonance level by the tunnel effect further running to a collector 12 through the intermediary of a resonance energy band also by the tunnel effect. Thus, the electrons in the base 14 are not scattered so much compared with any conventional element. In the non-resonance state, the electrons injected into the base 14 which are not resonant with a super lattice structured resonant energy band of the base 14 do not reach the collector 12.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title RESONANCE TUNNEL THREE TERMINAL ELEMENT
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