ELECTRONIC PART

PURPOSE:To form a circuit having an active region without using a chip by forming a nucleation surface having an area sufficiently small for crystal growth only from a single nucleus onto a substrate consisting of a non-nucleation surface and growing a crystal composed of the single nucleus to the nucleation surface. CONSTITUTION:One part of a large area substrate 1 composed of alumina is wired by a conductor 2 made up of Mo, thus manufacturing an electronic part substrate. An SiO2 film 3 is deposited onto the substrate, said substrate 1 is set into a decompression vapor growth device, an Si3N4 layer is shaped onto the SiO2 layer 3, and an Si3N4 fine region 4 as a nucleation surface is formed through patterning. Consequently, when an Si single crystal is shaped onto the substrate 1, to the surface of which a non-nucleation surface composed of SiO2 and the nucleation surface consisting of Si3N4 are formed, through a thermal CVD method, the Si single crystal 5 is shaped centering around said Si3N4 region 4. A circuit including a diode transistor and a resistor is formed centering around the single crystal 5. Accordingly, the circuit having an active region can be shaped without using a chip.